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Substrate processing apparatus and method of manufacturing a semiconductor device

A technology for processing equipment and substrates, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc.

Active Publication Date: 2012-05-23
KOKUSA ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, devices cannot be processed in later steps at temperatures exceeding those used in earlier steps

Method used

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  • Substrate processing apparatus and method of manufacturing a semiconductor device
  • Substrate processing apparatus and method of manufacturing a semiconductor device
  • Substrate processing apparatus and method of manufacturing a semiconductor device

Examples

Experimental program
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no. 1 example

[0014] will now refer to figure 1 The configuration of the substrate processing apparatus according to the first embodiment of the present disclosure will be described. figure 1 is a vertical sectional view of the substrate processing apparatus according to the first embodiment of the present disclosure. The substrate processing apparatus 100 includes a processing chamber 10, a transfer chamber (not shown), and a microwave supply unit. The processing chamber 10 processes a wafer 11 as a semiconductor substrate. The microwave supply unit includes a microwave generator 20 , a waveguide 21 and a waveguide opening 22 .

[0015] The microwave generator 20 generates microwaves such as fixed frequency microwaves or variable frequency microwaves. Examples of the microwave generator 20 include an electron cyclotron and the like. Microwaves generated in microwave generator 20 are introduced into processing chamber 10 via waveguide 21 from waveguide opening 22 communicating with proc...

no. 2 example

[0072] will now refer to figure 2 The configuration of a substrate processing apparatus according to a second embodiment of the present disclosure will be described. figure 2 is a vertical sectional view of a substrate processing apparatus according to a second embodiment of the present disclosure. In the second embodiment, instead of the substrate support table 12 in the first embodiment, a cooling channel 41 provided in the bottom wall of the processing vessel 18 is used as a substrate cooling unit. The configuration other than the configuration regarding the cooling passage 41 and the substrate processing operation including the heating process are the same as in the first embodiment, so the description will not be repeated for the sake of brevity. In addition, although not shown, the second embodiment has the same base 15 as in the first embodiment, so the description will not be repeated for the sake of brevity.

[0073] Such as figure 2 As shown, coolant channels 4...

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Abstract

A substrate processing apparatus includes a processing chamber configured to process a substrate having a front surface including a dielectric, a substrate support member provided within the processing chamber to support the substrate, a microwave supplying unit configured to supply a microwave to a front surface side of the substrate supported on the substrate support member; and a conductive substrate cooling unit which is provided at a rear surface side of the substrate supported on the substrate support member and has an opposing surface facing the rear surface of the substrate. A distance between the top of the substrate support member and the opposing surface of the substrate cooling unit corresponds to an odd multiple of 1 / 4 wavelength of the microwave supplied when the substrate is processed.

Description

technical field [0001] The present disclosure relates to a substrate processing technique for forming a semiconductor device such as an integrated circuit (IC) on a substrate, and more particularly, to a semiconductor manufacturing apparatus capable of processing a semiconductor device such as a semiconductor wafer (hereinafter referred to as "wafer"), etc., a substrate processing apparatus for processing a substrate, and a method of manufacturing a semiconductor device. Background technique [0002] There is a chemical vapor deposition (CVD) method for forming a film on the surface of a single substrate (a target substrate having a silicon wafer or glass as a base with a fine pattern of circuits formed thereon) in a semiconductor manufacturing process. )process. In the CVD process, a substrate is loaded into an airtight reaction chamber and heated by a heater provided in the reaction chamber to cause a chemical reaction while introducing a film-forming gas onto the substra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/324
CPCH01L21/67109H01L21/28194H01L21/67115H01L21/3105H01L21/324H01L21/268
Inventor 赤尾德信小川云龙奥野正久八岛伸二梅川纯史南嘉一郎
Owner KOKUSA ELECTRIC CO LTD