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Semiconductor luminous chip and manufacturing method thereof

A technology for light-emitting chips and manufacturing methods, which is applied to semiconductor devices, electrical components, circuits, etc., and can solve the problems of limited heat dissipation effect of light-emitting chips and difficulty in meeting the heat dissipation requirements of high-power light-emitting chips.

Inactive Publication Date: 2015-02-04
SCIENBIZIP CONSULTINGSHENZHENCO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these existing methods still have limited heat dissipation effects for light-emitting chips, and it is difficult to meet the heat dissipation requirements of high-power light-emitting chips.

Method used

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  • Semiconductor luminous chip and manufacturing method thereof
  • Semiconductor luminous chip and manufacturing method thereof
  • Semiconductor luminous chip and manufacturing method thereof

Examples

Experimental program
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Effect test

Embodiment Construction

[0041] see figure 1 , shows the semiconductor light emitting chip according to the first embodiment of the present invention. The semiconductor light emitting chip includes a first structure 100 and a second structure 200 . The first structure 100 and the second structure 200 are bonded together by wafer bonding technology. The first structure 100 includes a substrate 10 and a heat conducting convex layer 20 formed on the substrate 10 . In this embodiment, there are several thermally conductive convex layers 20 , and these thermally conductive convex layers 20 are formed on the substrate 10 at intervals. In other embodiments, the heat conducting convex layer 20 may be one, and the heat conducting convex layer 20 does not cover the entire substrate 10 . In this embodiment, the second structure 200 includes an epitaxial layer 40 and a conductive structure 50 formed on the epitaxial layer 40 . The conductive structure 50 defines a plurality of holes 51 . The thermally conduc...

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Abstract

The invention discloses a semiconductor luminous chip, which comprises a substrate and an epitaxial layer connected with the substrate, wherein the epitaxial layer comprises a first semiconductor layer, a luminous layer and a second semiconductor layer; a heat conducting convex layer is formed on the substrate; a conducting structure is formed on the first semiconductor layer of the epitaxial layer; the heat conducting convex layer is embedded into the conducting layer; and the heat conducting convex layer comprises a carbon nanotube growing vertically. The semiconductor luminous chip has high radiating efficiency. The invention further provides a manufacturing method for the semiconductor luminous chip.

Description

technical field [0001] The invention relates to a light-emitting chip and a manufacturing method thereof, in particular to a semiconductor light-emitting chip and a manufacturing method thereof. Background technique [0002] As a new light source, light-emitting diodes have been widely used in many occasions and have a tendency to replace traditional light sources. [0003] The most important component in a light-emitting diode is a light-emitting chip, which determines various light parameters of the light-emitting diode, such as intensity and color. Existing light-emitting chips are usually composed of an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer grown on a sapphire substrate in sequence. Excited by the external current, electrons in the N-type semiconductor layer of the light-emitting chip and holes in the P-type semiconductor layer recombine in the light-emitting layer to radiate light. [0004] Since the combination of electro...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/36H01L33/40H01L33/02H01L33/10H01L33/00
Inventor 曾坚信
Owner SCIENBIZIP CONSULTINGSHENZHENCO