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Storage elements and memory devices

A storage element and storage layer technology, applied in static memory, digital memory information, electrical components, etc., can solve problems such as flow and difficult current, and achieve the effects of reduced energy consumption, high reliability, and sufficient operating margin

Active Publication Date: 2016-08-03
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] However, since the address lines become more precise as the elements constituting the MRAM become finer, it is difficult to flow a sufficient current

Method used

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Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0080] Embodiments for realizing the present invention will be described in detail below with reference to the accompanying drawings.

[0081]

[0082] [1-1. Overview of Prior Memory Elements]

[0083] [1-2. Structure of Precedent 1]

[0084] [1-3. Experiment on Precedent 1]

[0085] [1-4. Structure of Precedent 2]

[0086] [1-5. Experiment on Precedent 2]

[0087]

[0088] [2-1. Issues related to precedents]

[0089] [2-2. Structure of memory element of the embodiment]

[0090] [2-3. Experiments on memory elements of the examples]

[0091]

[0092]

[0093] [1-1. Overview of Prior Memory Elements]

[0094] First, before explaining the memory element of the present invention, an overview of a memory element that is a precedent that forms the basis of previous memory elements will be described.

[0095] A memory element as a precedent (and a later-described embodiment) performs information recording by reversing the magnetization direction of the memory layer by ...

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PUM

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Abstract

The present invention relates to a memory element and a memory device, the memory element comprising: a memory layer having magnetization perpendicular to a film surface, and the magnetization direction of the memory layer changes; a magnetization fixed layer having magnetization perpendicular to the film surface , used as a reference for information; and an insulating layer; the magnetization direction of the storage layer is changed by injecting spin-polarized electrons along the stacking direction of the layer structure to perform recording of information, and the effective degeneration received by the storage layer The magnitude of the magnetic field is configured to be smaller than the saturation magnetization of the storage layer, and the ferromagnetic layer material constituting the storage layer has CoFeB as a base material, and a corrosion-resistant element is added to the base material.

Description

technical field [0001] The present invention relates to a storage element and a memory device having the storage element, the storage element includes a storage layer and a magnetization fixed layer, and the magnetization direction of the storage layer is changed by the flow of current, the storage layer stores the magnetization state of the ferromagnetic layer as information, and the magnetization The magnetization direction of the pinned layer is fixed. Background technique [0002] In information equipment such as computers, DRAMs having high operating speed and high density are widely used as random access memories. [0003] However, since the DRAM is a volatile memory in which information is lost when power is cut off, a nonvolatile memory in which information is not lost is required. [0004] Therefore, attention has been paid to a magnetic random access memory (MRAM) that records information using magnetization of a magnetic substance as a candidate for a nonvolatile...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/16
CPCG11C11/161G11C11/1675H10B61/22H10N50/85H10N50/10H10N50/01
Inventor 内田裕行细见政功别所和宏大森广之肥后丰浅山彻哉山根一阳
Owner SONY CORP
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