Memory element and memory device

Abstract

The present invention discloses a memory element and a memory device. The memory element a memory layer that has a magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein the memory layer has a lamination structure of a Co-Fe-B layer and an element belonging to any one of 1A group, 2A group, 3A group, 5A group, or 6A group, an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer.

Description

technical field

[0001] The present invention relates to a memory element including a memory layer storing the magnetization state of a ferromagnetic layer as information and a magnetization fixed layer whose magnetization direction is fixed, and changing the magnetization direction of the memory layer by passing an electric current. The invention also relates to a storage device with the storage element. Background technique

[0002] In information devices such as computers, high-density DRAMs operating at high speeds have been widely used as random access memories.

[0003] However, DRAM is a volatile memory in which information is erased when power is turned off, and therefore, a nonvolatile memory in which information is not erased is desired.

[0004] In addition, Magnetic Random Access Memory (MRAM), which records information by magnetization of a magnetic material, has attracted attention as an alternative nonvolatile memory, and thus has been developed.

[0005] MRA...

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