38results about How to "Lower write current" patented technology

A phase change memory device with a reduced phase change volume and lower drive current and a method for forming the same are provided. The method includes forming a bottom insulating layer comprising a bottom electrode contact, forming a bottom electrode film on the bottom electrode contact, forming an anti-reflective coating (ARC) film on the bottom electrode film, patterning and etching the ARC film and the bottom electrode film to form a bottom electrode comprising a side edge, and forming a phase change material portion on the ARC film and the bottom insulating layer, wherein the phase change material portion physically contacts the side edge of the bottom electrode. The method further includes forming a top electrode on the phase change material portion, and forming a top electrode contact on the top electrode.

The invention discloses a memory element and a memory device. The memory element includes a layered structure including a memory layer that has a magnetization perpendicular to a film face; a magnetization-fixed layer; and an insulating layer provided between the memory layer. An electron that is spin-polarized is injected in a lamination direction of a layered structure, a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer, in regard to the insulating layer that comes into contact with the memory layer, and the other side layer with which the memory layer comes into contact at a side opposite to the insulating layer, at least an interface that comes into contact with the memory layer is formed of an oxide film, and the memory layer includes at least one of non-magnetic metal and oxide in addition to a Co-Fe-B magnetic layer.

In an embodiment, a device is disclosed that includes a magnetic tunnel junction (MTJ) structure. The device also includes a read path (102) coupled to the MTJ structure and a write path (104) coupled to the MTJ structure. The write path (104) is separate from the read path (102). The device in substance comprises a pair of serially coupled MTJ structures (106, 108), whereby the read path (102) comprises only one of the MTJ structure (108). This provides for combined improved read margin and improved write margin.

Provided are a storage element for which TMR characteristics can be improved, a storage device equipped with the storage element, and a magnetic head. The storage element has a layer structure including a storage layer in which the magnetization direction is changed in response to information, a magnetization fixed layer which has magnetization orthogonal to the film surface as a reference for the information stored in the storage layer, and an intermediate layer which is provided between the storage layer and the magnetization fixed layer and is made of a nonmagnetic material. Carbon is inserted into the intermediate layer and a current is supplied in the stacking direction of the layer structure so that the magnetization direction of the storage layer is changed to record information in the storage layer.

A non-volatile memory element includes a recording layer that includes a phase change material, a lower electrode provided in contact with the recording layer, an upper electrode provided in contact with a portion of the upper surface of the recording layer, a protective insulation film provided in contact with the other portion of the upper surface of the recording layer, and an interlayer insulation film provided on the protective insulation film. High thermal efficiency can thereby be obtained because the size of the area of contact between the recording layer and the upper electrode is reduced. Providing the protective insulation film between the interlayer insulation film and the upper surface of the recording layer makes it possible to reduce damage sustained by the recording layer during patterning of the recording layer or during formation of the through-hole for exposing a portion of the recording layer.

An improved magnetoresistive memory device has a reduced distance between the magnetic memory element and a conductive memory line used for writing to the magnetic memory element. The reduced distance is facilitated by forming the improved magnetoresistive memory device according to a method that includes forming a mask over the magnetoresistive memory element and forming an insulating layer over the mask layer, then removing portions of the insulating layer using a planarization process. A conductive via can then be formed in the mask layer, for example using a damascene process. The conductive memory line can then be formed over the mask layer and conductive via.

Disclosed is a spin-orbit torque magnetic random access memory (SOT-MRAM) without an external magnetic field. The spin-orbit torque magnetic tunneling junction(SOT-MTJ) of the random access memory is based on perpendicular magnetic anisotropy, apart from comprising an anti-parallel layer, a tunneling barrier layer, a reference layer and an antiferromagnetc metal layer in a conventional MTJ structure, is also additionally provided with a nonferromagnetic metal layer, optimizes the material of the antiferromagnetc metal layer and improves the shape of the tunneling barrier layer; and the SOT-MTJ structure is successively provided with seven layers which are respectively a bottom electrode, the nonferromagnetic metal layer, a first ferromagnetic metal layer, i.e., the anti-parallel layer, a wedge tunneling barrier layer, a second ferromagnetic metal layer, i.e., the reference layer, the antiferromagnetc metal layer and a top electrode from the bottom to the top. According to the invention, writing operation can be carried out without the external magnetic field. Compared to a conventional SOT-MRAM, the energy consumption is smaller, and the geometric ratio micro-shrink performance reduced along with a technical node is more excellent.

The invention belongs to the technical field of storage and provides a chip which comprises a basic storage unit, wherein the basic storage unit is a resistance-variable storage device which comprises a conductive doped oxide substrate; a metal electrode made of a first metal material and a second metal material is respectively arranged at two opposite sides of the doped oxide substrate to form a first metal electrode / doped oxide substrate / second metal electrode structure; and the first metal electrode and the second metal electrode form a contact barrier with the doped oxide substrate. The invention further provides a preparation method of the chip. The capacity of the chip provided by the invention is greatly improved while the write-in current of the device is reduced, thereby reducing the chip consumption.

The invention discloses a storage element and a storage device, wherein the storage element includes a layer structure, and the layer structure includes: a storage layer, which has magnetization perpendicular to the film surface, and whose magnetization direction changes corresponding to information; a magnetization fixed layer, which has magnetization perpendicular to the film surface; and an insulating layer disposed between the storage layer and the fixed magnetization layer. Spin-polarized electrons are injected in the lamination direction of the layer structure, so that the magnetization direction of the storage layer is changed, and information recording is performed on the storage layer, the magnitude of the effective diamagnetic field received by the storage layer is smaller than the saturation magnetization of the storage layer, Also, the storage layer and the fixed magnetization layer have film thicknesses such that the interface magnetic anisotropy energy becomes larger than the diamagnetic field energy.

The invention discloses a two-dimensional material phase-change storage unit, which includes a substrate, a lower electrode, a phase-change layer, an upper electrode, and a two-dimensional material layer arranged sequentially above the substrate from bottom to top, and the two-dimensional material layer is arranged The contact surface between the phase change layer and the lower electrode is also arranged on the contact surface between the phase change layer and the upper electrode. The two-dimensional material used in the present invention has a very small thermal conductivity. In addition to the thermal resistance formed by the interface, it can also reduce the loss of heat, reduce the writing current, and improve the electrothermal efficiency; the two-dimensional material layer also has a good Excellent mechanical properties, such as high modulus of elasticity, high compressive strength and breaking strength, etc., can play a buffer role. During the phase change process, the thermal expansion and extrusion stress and strain of the phase change layer are smaller, so it can effectively reduce The stress and strain between the phase change layer and the electrode layer during the temperature rise of the small phase change can improve the life of the device and the number of times of erasing and writing.

The present invention relates to memory elements and memory devices. The memory element includes: a memory layer having magnetization perpendicular to a film surface whose direction of magnetization changes according to information; a magnetization fixed layer having a magnetization perpendicular to the film surface serving as a reference for information stored in the memory layer. magnetization; and an insulating layer of a non-magnetic substance, the insulating layer being disposed between the storage layer and the magnetization fixed layer. In the above memory element, the magnetization of the storage layer is reversed using spin torque magnetization reversal to store information, and the spin torque magnetization reversal is generated by a current flowing in the lamination direction of the layer structure including the memory layer, an insulating layer, and a magnetization fixed layer, the storage layer has a layer directly on the side opposite to the insulating layer, and the layer includes a conductive oxide.

The present invention relates to a magnetic memory that can prevent wrong writing and can reduce the writing current. Each of the multiple storage areas 3 of the magnetic memory 1 has: a first magnetic memory whose magnetization direction A changes due to an external magnetic field. The TMR element 4 of the layer 41; the write wiring 31 that provides an external magnetic field to the first magnetic layer 41 by a write current; is made of an approximately ring-shaped body with an intervening gap and a pair of opposite end faces 5a to surround the write The yoke 5 arranged around the wiring 31; and the write transistor 32 that controls conduction of the write current. Furthermore, the TMR element 4 is arranged such that the pair of side surfaces 4 a face the pair of end surfaces 5 a of the yoke 5 , respectively. With this configuration, a magnetic field based on a write current can be efficiently supplied to the TMR element 4 , so that the magnetization direction A of the first magnetic layer 41 can be reversed even with a small write current.

The present invention provides a memory element and a memory device. The memory element includes a layered structure and a layer of negative thermal expansion material. The layered structure includes a storage layer, a magnetization fixed layer, and an intermediate layer. The storage layer has magnetization perpendicular to the film plane in which the direction of magnetization changes according to information, and includes a magnetic layer having a positive magnetostriction constant. The direction of magnetization is changed by applying a current along the stacking direction of the layered structure to record information in the storage layer. The magnetization fixed layer has magnetization perpendicular to the film surface, and becomes the basis of information stored in the storage layer. The intermediate layer is formed of a non-magnetic material, and is provided between the storage layer and the magnetization fixed layer.

The invention provides a magnetic random access memory and a preparation method thereof. The magnetic random access memory comprises a magnetic tunnel junction structure; the word line is connected with the top of the magnetic tunnel junction structure; a read bit line in contact with the bottom of the magnetic tunnel junction structure; the write-in bit line is positioned on the second side of the magnetic tunnel junction structure and is spaced from the read bit line and the word line; the U-shaped variable magnet connecting structure comprises a bottom edge part and a side wall part; the bottom edge part is positioned below the reading bit line and stretches across the reading bit line along a first direction; the top of the side wall portion located on the first side of the magnetic tunnel junction structure is connected with the word line, the top of the side wall portion located on the second side of the magnetic tunnel junction structure is connected with the write-in bit line,and the bottom of the side wall portion is connected with the bottom edge portion. According to the invention, the U-shaped variable magnet connecting structure is arranged, and the magnetic field generated by the current flowing through the U-shaped variable magnet connecting structure assists the overturning of the magnetic tunnel junction structure, so that the current required by the overturning of the magnetic tunnel junction structure is reduced, and the required write-in current is further reduced.

The invention discloses a storage element and a storage device. The storage element has a stacked structure including: a storage layer having magnetization perpendicular to the film surface and whose magnetization direction changes depending on information, and including a Co-Fe-B magnetic layer whose magnetization direction is applied by applying The current is changed to record information in the storage layer, the magnetization fixed layer has magnetization perpendicular to the film surface that becomes the reference of the information stored in the storage layer, and the intermediate layer is formed of a non-magnetic material and is provided in Between the storage layer and the fixed magnetization layer; the first oxide layer and the second oxide layer.

An improved magnetoresistive memory device has a reduced distance between the magnetic memory element and a conductive memory line used for writing to the magnetic memory element. The reduced distance is facilitated by forming the improved magnetoresistive memory device according to a method that includes forming a mask over the magnetoresistive memory element and forming an insulating layer over the mask layer, then removing portions of the insulating layer using a planarization process. A conductive via can then be formed in the mask layer, for example using a damascene process. The conductive memory line can then be formed over the mask layer and conductive via.

The invention discloses a storage element and a storage device, wherein the storage element includes a layer structure, and the layer structure includes: a storage layer having a magnetization perpendicular to the film surface; a magnetization fixed layer; and an insulating layer arranged between the storage layer and the magnetization fixed between layers. Spin-polarized electrons are injected in the lamination direction of the layer structure, and the size of the effective diamagnetic field received by the storage layer is smaller than the saturation magnetization of the storage layer, with regard to the insulating layer in contact with the storage layer and on the opposite side of the insulating layer with The other layer in contact with the storage layer, at least the interface with the storage layer is made of an oxide film, and in addition to the Co-Fe-B magnetic layer, the storage layer also includes at least one of a non-magnetic metal and an oxide.

The invention discloses a memory element and a memory device, wherein the memory element includes a layer structure. The layer structure includes: a storage layer with magnetization perpendicular to the film surface; a fixed magnetization layer with magnetization perpendicular to the film surface; an insulating layer arranged between the storage layer and the fixed magnetization layer; and a cover layer arranged on the storage layer The side of the side opposite to the side of the insulating layer side, in which spin-polarized electrons are injected in the lamination direction of the layer structure, so that the magnetization direction of the storage layer is changed, and information recording is performed, the effective feedback received by the storage layer The magnitude of the magnetic field is smaller than the saturation magnetization of the storage layer, and at least the surface of the cap layer that is in contact with the storage layer is made of a Ta film.