Storage Elements and Storage Devices

A storage element and storage layer technology, applied in electrical components, information storage, static memory, etc., to achieve the effects of enhancing anisotropy, reducing switching current, and reducing power consumption

Active Publication Date: 2017-04-05
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, MRAM has challenges associated with reducing power consumption and increasing capacity

Method used

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  • Storage Elements and Storage Devices
  • Storage Elements and Storage Devices
  • Storage Elements and Storage Devices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0051] Embodiments of the present invention will be described in the following order

[0052] 1. Configuration of the storage device according to the embodiment

[0053] 2. General Description of Storage Elements According to Embodiments

[0054] 3. Concrete structure of the embodiment

[0055] 4. Examples

[0056] 5. replace

[0057] 1. Configuration of the storage device according to the embodiment

[0058] First, the configuration of a storage device according to an embodiment of the present invention will be described.

[0059] figure 1 and figure 2 Each shows a schematic diagram of a storage device according to an embodiment. figure 1 is a stereoscopic view, and figure 2 is a cross-sectional view.

[0060] Such as figure 1 As shown, in the memory device according to the embodiment, the memory element 3 including ST-MRAM is arranged near the intersection of two kinds of address interconnections (for example, word line and bit line) perpendicular to each other, ...

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Abstract

The invention discloses a storage element and a storage device. The storage element has a stacked structure including: a storage layer having magnetization perpendicular to the film surface and whose magnetization direction changes depending on information, and including a Co-Fe-B magnetic layer whose magnetization direction is applied by applying The current is changed to record information in the storage layer, the magnetization fixed layer has magnetization perpendicular to the film surface that becomes the reference of the information stored in the storage layer, and the intermediate layer is formed of a non-magnetic material and is provided in Between the storage layer and the fixed magnetization layer; the first oxide layer and the second oxide layer.

Description

technical field [0001] The present invention relates to a storage element and a storage device having a plurality of magnetic layers and recording using spin torque magnetization switching. Background technique [0002] With the rapid development of various information devices ranging from mobile terminals to large-capacity servers, higher performance improvements, such as higher integration, increased speed, have been pursued in elements constituting the devices such as storage elements and logic elements large and lower power consumption. In particular, semiconductor nonvolatile memory has made remarkable progress, and flash memory, which is a large-capacity file storage, has spread at a rate at which hard disk drives are being replaced by flash memory. At the same time, the research and development of FeRAM (Ferroelectric Random Access Memory), MRAM (Magnetic Random Access Memory), PCRAM (Phase Change Random Access Memory), etc. code storage or use them as working memor...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/08G11C11/15
CPCG11C11/161H10B61/22H10N50/80H10N50/10G11C11/16G11C11/15
Inventor 山根一阳细见政功大森广之别所和宏肥后丰浅山彻哉内田裕行
Owner SONY CORP
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