Magnetic memory

Abstract

The present invention relates to a magnetic memory that can prevent wrong writing and can reduce the writing current. Each of the multiple storage areas 3 of the magnetic memory 1 has: a first magnetic memory whose magnetization direction A changes due to an external magnetic field. The TMR element 4 of the layer 41; the write wiring 31 that provides an external magnetic field to the first magnetic layer 41 by a write current; is made of an approximately ring-shaped body with an intervening gap and a pair of opposite end faces 5a to surround the write The yoke 5 arranged around the wiring 31; and the write transistor 32 that controls conduction of the write current. Furthermore, the TMR element 4 is arranged such that the pair of side surfaces 4 a face the pair of end surfaces 5 a of the yoke 5 , respectively. With this configuration, a magnetic field based on a write current can be efficiently supplied to the TMR element 4 , so that the magnetization direction A of the first magnetic layer 41 can be reversed even with a small write current.

Description

[0001] technology area [0002] The invention relates to a magnetic memory which stores data on a magnetoresistance effect element. Background technique [0003] In recent years, MRAM (Magnetic Random Access Memory) has attracted attention as a storage device used in information processing devices such as computers and communication equipment. MRAM stores data through magnetic force, so there is no disadvantage of losing information when the power is cut off like volatile memory DRAM (Dynamic Random Access Memory) or SRAM (Static RAM). Furthermore, compared with the existing non-volatile storage units such as flash EEPROM or hard disk devices, the access speed, reliability, power consumption, etc. are very excellent. Therefore, MRAM has the possibility of completely replacing the functions of volatile memories such as DRAM and SRAM, and the functions of non-volatile storage units such as flash EEPROMs and hard disk devices. Currently, people are rapidly developing an informa...

AI Technical Summary

Problems solved by technology

Therefore, even in the TMR element 101 other than the TMR element 101 for writing binary data, the magnetic field from the wiring 102 or 104 may be mistaken and the magnetization direction A of the first magnetic layer 101a may be reversed.

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