Storing element and storing device

Abstract

The invention discloses a storing element and a storing device. The storing element comprises a storing layer having a magnetization piece varying the magnetization direction with corresponding information and perpendicular to the surface of a film; a magnetization fixing layer having a magnetization piece perpendicular to the surface of the film; an insulating layer equipped between the storing layer and magnetization fixing layer. Self-spinning polarized electrons are injected along the overlapping direction of the layer structure. The magnetization direction of the storing layer is then changed. Information about the storing layer is recorded. The effective counter magnetic field received by the storing layer has a size smaller than the saturated magnetization volume of the storing layer. Meanwhile, a Ta film is formed in a way to a magnetization fixing layer face opposed to the insulating layer.

Description

technical field [0001] The present invention relates to a storage element comprising a storage layer storing the magnetization state of a ferromagnetic layer as information and a magnetization fixed layer whose magnetization direction is fixed, and the magnetization direction of the storage layer is changed by passing an electric current; the present invention also relates to a A storage device having the storage element. Background technique [0002] In information devices such as computers, high-density DRAMs operating at high speeds have been widely used as random access memories. [0003] However, DRAM is a volatile memory in which information is erased when power is turned off, and therefore, a nonvolatile memory in which information is not erased is desired. [0004] In addition, Magnetic Random Access Memory (MRAM), which records information by magnetization of a magnetic material, has attracted attention as an alternative nonvolatile memory, and thus has been develo...

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Problems solved by technology

[0015] However, as the size of the elements that make up the MRAM is reduced, the address wiring becomes thinner, making it difficult to pass a sufficient current

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