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Storing element and storing device

A storage element and storage layer technology, which is applied in information storage, electrical components, static memory, etc., can solve the problems of thin address wiring and difficult current flow, and achieve reduced write current, high reliability and stable operation, Effect of Power Consumption Reduction

Inactive Publication Date: 2012-04-04
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] However, as the size of the elements that make up the MRAM is reduced, the address wiring becomes thinner, making it difficult to pass a sufficient current

Method used

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  • Storing element and storing device
  • Storing element and storing device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0069] 1. Outline of the memory element of the embodiment

[0070] 2. Structure of Embodiment

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Abstract

The invention discloses a storing element and a storing device. The storing element comprises a storing layer having a magnetization piece varying the magnetization direction with corresponding information and perpendicular to the surface of a film; a magnetization fixing layer having a magnetization piece perpendicular to the surface of the film; an insulating layer equipped between the storing layer and magnetization fixing layer. Self-spinning polarized electrons are injected along the overlapping direction of the layer structure. The magnetization direction of the storing layer is then changed. Information about the storing layer is recorded. The effective counter magnetic field received by the storing layer has a size smaller than the saturated magnetization volume of the storing layer. Meanwhile, a Ta film is formed in a way to a magnetization fixing layer face opposed to the insulating layer.

Description

technical field [0001] The present invention relates to a storage element comprising a storage layer storing the magnetization state of a ferromagnetic layer as information and a magnetization fixed layer whose magnetization direction is fixed, and the magnetization direction of the storage layer is changed by passing an electric current; the present invention also relates to a A storage device having the storage element. Background technique [0002] In information devices such as computers, high-density DRAMs operating at high speeds have been widely used as random access memories. [0003] However, DRAM is a volatile memory in which information is erased when power is turned off, and therefore, a nonvolatile memory in which information is not erased is desired. [0004] In addition, Magnetic Random Access Memory (MRAM), which records information by magnetization of a magnetic material, has attracted attention as an alternative nonvolatile memory, and thus has been develo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/16H01L43/08H10N50/10
CPCH01L43/08H01F10/32H01L43/10H01F10/3286H01L27/228G11C11/16H01F10/329G11C11/1659G11C11/161H10B61/22H10N50/85H10N50/10
Inventor 内田裕行细见政功大森广之别所和宏肥后丰山根一阳
Owner SONY CORP
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