The invention discloses a manufacturing method of a super-junction
MOSFET structure. The manufacturing method comprises the following steps of S1, obtaining the
surface roughness, the surface defect density and the interface
trap density of a super-junction
MOSFET; s2, comparing the obtained surface and interface quality parameters according to a threshold value; s3, performing wet
chemical cleaning or
plasma cleaning on the
semiconductor material needing to be improved; s4, applying a
passivation layer on the surface of the cleaned
semiconductor material; s5, introducing a high-
dielectric-constant material into a gate interface to serve as a
gate dielectric layer; s6, according to the working
voltage and the
power level of the super junction
MOSFET; s7, carrying out electrical characteristic characterization on the super-junction MOSFET after surface treatment and interface regulation and control; the
surface roughness, the defect density and the interface
trap density are analyzed through an atomic force
microscope and a
scanning electron microscope, quantitative parameters are provided for evaluating the surface quality, potential problems are helped to be recognized, meanwhile, a wet
chemical cleaning method and a
plasma cleaning method are adopted, it is ensured that the surface is clean and flat, impurities and
oxide layers are eliminated, and the surface quality is improved.