Memory element and memory

A storage element and storage layer technology, applied in static memory, digital memory information, information storage, etc., can solve problems such as address line thinning, and achieve the effect of reducing total power consumption, stable operation, and power consumption.

Inactive Publication Date: 2007-11-14
SONY CORP
View PDF3 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0017] However, as the size of the elements that make up MRAM continues to shrink, the address lines get thinner, so it may not be possible to get enough current into the lines

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory element and memory
  • Memory element and memory
  • Memory element and memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0068] Before describing specific embodiments of the present invention, an outline of the present invention will be described first.

[0069] In an embodiment of the present invention, information is recorded by reversing the magnetization direction of the storage layer of the storage element using the spin injection described above. The storage layer is composed of a magnetic material such as a ferromagnetic layer, and holds information based on the magnetization state (magnetization direction) of the magnetic material.

[0070] In the basic operation of reversing the magnetization direction of the magnetic layer by spin injection, a current having a certain threshold value (Ic) or higher is caused to flow in a direction perpendicular to the film surface of the memory element generated by the giant magnetoresistive element ( GMR elements) or magnetic tunnel junction elements (MTJ elements) in memory elements. Here, the polarity (direction) of the current depends on the magne...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A memory element including a memory layer that retains information based on a magnetization state of a magnetic material is provided. In the memory element, a magnetization pinned layer is provided for the memory layer through an intermediate layer, the intermediate layer is formed of an insulator, spin-polarized electrons are injected in a stacking direction to change a magnetization direction of the memory layer, so that information is recorded in the memory layer. Also, a ferromagnetic layer forming the memory layer has a magnetostriction constant of 1x10<-5 >or more.

Description

[0001] Related Application Cross Reference [0002] The present invention contains subject matter related to Japanese Patent Application No. JP2006-134435 filed in the Japan Patent Office on May 12, 2006, the entire content of which is hereby incorporated by reference. technical field [0003] The present invention relates to a storage element, the storage element is composed of a storage layer and a magnetization fixed layer, wherein the storage layer can store the magnetization state of the ferromagnetic layer as information, and the magnetization fixed layer has a fixed magnetization direction, in the storage element, making a current flow in a direction perpendicular to the surface of the film to inject spin-polarized electrons, thereby changing the magnetization direction of the storage layer; the present invention also relates to a memory comprising a memory element suitable for use as a non-volatile memory ( non-volatile memory). Background technique [0004] High-sp...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/16
CPCG11C11/16
Inventor 山元哲也大森广之细见政功肥后丰山根一阳大石雄纪鹿野博司
Owner SONY CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap