Magnetic storage element and memory
A technology of storage elements and storage layers, applied in static memory, digital memory information, electrical components, etc., to achieve the effect of reducing the amount of current, increasing the boundary of the operating area, and improving the efficiency of spin injection
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[0198] A thermally oxidized film with a thickness of 2 μm was formed on a silicon substrate with a thickness of 0.575 mm, and on the top of the silicon substrate was formed a Figure 5 Storage element 3 of the configuration shown.
[0199] Specifically, as follows for each layer selection is configured as Figure 5 The materials and film thicknesses of the memory element 3 are shown. A Ta film with a thickness of 3 nm was selected as the bottom layer 11 . PtMn with a thickness of 30 nm is selected as the antiferromagnetic layer 12 . A CoFe film with a thickness of 2.2 nm was selected as the ferromagnetic layer 13 . A CoFeB film having a thickness of 2 nm is selected as the ferromagnetic layer 15 of the magnetization fixed layer 31 . A Ru film having a thickness of 0.8 nm was selected as the nonmagnetic layer 14 of the magnetization fixed layer 31 having a laminated ferromagnetic structure. A MgO film with a thickness of 0.8 nm was selected as the tunnel insulating layer 1...
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