Magnetic storage element and memory

A technology of storage elements and storage layers, applied in static memory, digital memory information, electrical components, etc., to achieve the effect of reducing the amount of current, increasing the boundary of the operating area, and improving the efficiency of spin injection
CN101202325BActive Publication Date: 2010-06-09SONY CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
SONY CORP
Publication Date
2010-06-09

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Abstract

The present invention provides a storage element and a storage. A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storagelayer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.
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Description

[0001] Cross References to Related Applications

[0002] The present invention contains subject matter related to Japanese Patent Application JP 2006-335016 filed in the Japan Patent Office on December 12, 2006, the entire content of which is hereby incorporated by reference. technical field

[0003] The present invention relates to a memory element comprising: a memory layer in which the magnetization state of a ferromagnetic layer is stored as information; and a magnetization pinned layer in which the magnetization direction is fixed, wherein the Direction Applying current injects spin-polarized electrons to change the magnetization direction of the storage layer. The invention also relates to a memory comprising such a memory element, and is applicable to non-volatile memories. Background technique

[0004] High-speed and high-density DRAMs have been widely used as random access memories in information equipment such as computers.

[0005] However, since DRAM is a volat...

Claims

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