Spinning light-emitting diode based on Fe3N/GaN heterostructure and preparation method of spinning light-emitting diode

Abstract

The invention discloses a spinning light-emitting diode based on a Fe3N / GaN heterostructure and a preparation method of the spinning light-emitting diode substrate. The spinning light-emitting diode structurally comprises a substrate, a bonding layer, a P electrode, a P-GaN layer, an active layer, an N-GaN layer, a Fe3N film layer and an electrode from bottom to top. The preparation method comprises the following steps: 1, a commercial GaN-based ordinary light-emitting diode is used as a background diode, and the commercial GaN-based ordinary light-emitting diode structurally comprises the substrate, the bonding layer, the P electrode, the P-GaN layer, the active layer and the N-GaN layer; 2, a layer of (002) oriented Fe3N film layer is sputtered on the GaN-based ordinary light-emitting diode in the Step 1 through a magnetron sputtering method; and 3, a Cr / Cu ohmic contact electrode is prepared on the surface of a sample obtained in the step 2 through a standard technology. Through selecting of a spin injection layer material, the conductivity of a spin injection layer and the conductivity of a spin transport layer are better matched, and thus the spin injection efficiency is improved.

Description

technical field [0001] The invention relates to a Fe-based 3 The spin light-emitting diode with N / GaN heterostructure and its preparation method can be applied in the fields of optical communication, liquid crystal display and the like. Background technique [0002] Spintronics, also known as magnetoelectronics. It uses the spin and magnetic moment of electrons, so that in addition to the charge transport, the solid device also adds the spin and magnetic moment of electrons. It is a new discipline and technology. Materials used in spintronics need to have high electron polarizability and long electron spin relaxation time. Many new materials, such as magnetic semiconductors, semi-metals, etc., have been extensively studied in recent years in order to have properties that meet the needs of spintronic applications. [0003] The spin injection layer of traditional spin light-emitting diodes is usually made of ferromagnetic metal materials such as Fe, so the conductance of t...

AI Technical Summary

Problems solved by technology

[0003] The spin injection layer of traditional spin light-emitting diodes is usually made of ferromagnetic metal materials such as Fe, so the conductance of the spin injection layer and the spin transport layer do not match, resulting in low spin injection efficiency.

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