Design and preparation methods of magnetic tunnel junction based on Fe3N/GaN heterostructure

Abstract

The invention discloses design and preparation methods of a magnetic tunnel junction based on a Fe3N / GaN heterostructure. The designed magnetic tunnel junction comprises a substrate and further comprises a ferromagnetic electrode, a barrier layer, a ferromagnetic electrode, a pinning layers and a protective layer which are arranged on the substrate sequentially. The preparation method comprises the following steps that 1, a monocrystal sapphire film serves as the substrate, and cleaned in an ultrasonic cleaner through alcohol for five minutes; 2, a layer of Fe3N film is sputtered on the sapphire substrate in the step 1 through a magnetron sputtering method to serve as one of the ferromagnetic electrode; 3, a layer of GaN film is sputtered on the surface of a sample obtained in the step 2 to serve as the barrier layer; 4, a layer of Fe3N film is sputtered on the surface of a sample obtained in the step 3 to serve as the other ferromagnetic electrode; and 5, the IrMn pinning layer and the Ru protecting layer are formed on the surface of a sample obtained in the step 4 sequentially through a standard technology. Through material selection, the ferromagnetic electrodes and an electricconductor of a tunneling layer are better matched, and thus the spin injection efficiency is improved.

Description

technical field [0001] The invention relates to a Fe-based 3 The invention relates to a design and preparation method of a magnetic tunnel junction of N / GaN heterostructure, belonging to the field of information industry. Background technique [0002] The magnetic tunnel junction refers to an extremely thin insulating layer with a thickness of several nanometers sandwiched between two ferromagnetic sheets to form a so-called junction element. In ferromagnetic materials, due to the quantum mechanical exchange effect, the 3d orbital localized electronic energy bands of ferromagnetic metals are split, so that the spin-up and spin-down electrons near the Fermi surface have different energy state densities. In MTJs, the mechanism of the TMR effect is the spin-dependent tunneling effect. The general structure of MTJs is a sandwich structure of ferromagnetic layer / nonmagnetic insulating layer / ferromagnetic layer (FM / I / FM). At saturation magnetization, the magnetization direction...

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Problems solved by technology

[0003] The ferromagnetic electrode of the traditional magnetic tunnel junction is usually made of metal materials such as Fe, so the conductance of the ferromagnetic electrode and the insulating (semiconductor) tunneling layer does not match, which leads to low spin injection efficiency

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