10 results about "Single crystal sapphire" patented technology

An article includes a cylinder of single crystal sapphire for use during solid state nuclear magnetic resonance (SSNMR) measurements. The axis of the cylinder is aligned with an axis of symmetry of the single crystal. The cylinder is configured to rotate at a known angle and known fraction of an angular velocity as the sample during operation of the SSNMR system. In some uses, a current angle of a stator is determined based on separation of peaks in a measured signal from aluminum atoms in the sapphire crystal. Stator orientation is adjusted until the current angle is within a desired tolerance of a target angle, including one different from a magic angle.

This invention relates to an ultra-flat nickel (100) single-crystal thin film and its preparation method. The method involves depositing a nickel thin film on the surface of an A-plane single-crystal sapphire substrate using physical vapor deposition. The nickel thin film is then subjected to high-temperature annealing in a reducing protective atmosphere to obtain a single-crystal nickel thin film with a (100) orientation. By selecting an A-plane single-crystal sapphire with a (11-20) crystal orientation as the epitaxial substrate, it exhibits excellent lattice matching with the Ni (100) plane (mismatch <5%), effectively inducing the epitaxial growth of the nickel thin film along the [100] direction and suppressing the nucleation and growth of grains with other orientations. Furthermore, the prepared nickel (100) single-crystal thin film possesses advantages such as atomic-level surface flatness (Ra < 1 nm), absence of twin defects, and high crystal orientation consistency, meeting the stringent material quality requirements of high-end devices.

This application discloses a GaN-based micro-LED epitaxial structure, device, and fabrication method. The GaN-based micro-LED epitaxial structure includes, along the growth direction, a substrate, a buffer layer, an N-type doped GaN electron injection layer, an active region, and an Al2O3 layer. y Ga 1‑y The substrate consists of an N-type electron blocking layer and a P-type doped GaN hole injection layer; the substrate is selected from a (111) crystal plane single-crystal silicon substrate, a c-axis single-crystal sapphire substrate, a c-axis single-crystal silicon carbide substrate, or a c-axis self-supporting single-crystal gallium nitride substrate; the active region includes an InGaN-based light-emitting structure, which is at least one of an InGaN / GaN alternating multi-quantum-well structure, a GaN / InGaN / GaN single-quantum-well structure, and an InGaN quantum dot structure. This application shortens the carrier radiative recombination lifetime, weakens the quantum-confined Stark effect, and improves the radiative recombination rate by employing a thin quantum well or quantum dot active region structure, thereby enhancing the device's modulation bandwidth and photoelectric efficiency, meeting the performance requirements of light sources for applications such as data center optical interconnects, co-packaged optics, and high-speed visible light communication.

An endoscope distal end portion includes: a cylindrical distal end member including a first through-hole having an enlarged diameter region formed in a first distal end surface; a first optical element that is fitted into the enlarged diameter region, is made of a single crystal sapphire having a thermal expansion coefficient smaller than that of the distal end member, and has a circular second distal end surface; and solder sealing a gap between a side surface of the first optical element and an inner surface of the enlarged diameter region. A c-axis direction of the single crystal sapphire is substantially parallel to a first imaginary line connecting a surface center point of the first distal end surface, a first neighbor point on an outer circumference of the first distal end surface which is closest to the first optical element, and a first center point of the first through-hole.

This invention belongs to the fields of semiconductor thin film material growth technology and optoelectronic device technology, and discloses a gallium oxide epitaxial structure based on an n-plane sapphire substrate and its application in the fabrication of optoelectronic semiconductor devices or device arrays. The gallium oxide epitaxial structure includes a substrate and a Ga2O3 layer on the substrate. The substrate is the sapphire layer, which is a (11-23) oriented single-crystal sapphire, i.e., n-plane sapphire. The dual-mode device fabricated based on this gallium oxide epitaxial structure can achieve reversible functional switching under different bias voltages: it exhibits high sensitivity and fast response photodetector performance under low bias voltage; and it displays a significant and continuous photoconductivity effect under high bias voltage, which can be used to simulate the synaptic characteristics of brain-like neurons. This invention features a simple structural design and controllable process, enabling the simultaneous realization of high-performance ultraviolet photodetector and synaptic neural network functions in a single device, effectively improving the device's integration and application flexibility, and is suitable for fields such as ultraviolet imaging, optical communication, and intelligent sensing.

The application discloses a preparation method of a diamond two-dimensional electron gas heterojunction structure based on nitrogen face polarity boron aluminum nitrogen material, and comprises the following steps: obtaining a C face single crystal sapphire substrate; epitaxially growing boron aluminum nitrogen with a donor doped nitrogen face polarity wurtzite structure on the C face single crystal sapphire substrate to form a boron aluminum nitrogen epitaxial layer; in the process of growing the boron aluminum nitrogen, the component of boron and aluminum of the boron aluminum nitrogen epitaxial layer is controlled by regulating the ratio of a boron source and an aluminum source; and growing a diamond epitaxial layer on the boron aluminum nitrogen epitaxial layer to form a heterojunction. The application is based on the sapphire substrate material to prepare a diamond heterojunction device, the diamond layer required by the heterojunction is obtained by epitaxial growth, the size limitation of a high-quality diamond substrate is broken through, the heterojunction manufacturing cost is reduced, and an effective method for obtaining a large-size diamond heterojunction is provided.

This invention belongs to the field of semiconductor polishing technology, specifically relating to a processing method for sapphire substrates used in the high-orientation growth of two-dimensional materials. The method includes: mounting a C-axis [0001] single-crystal sapphire substrate on an angled processing device to process a single-crystal sapphire substrate with a C-axis offset from the A-axis or a C-axis offset from the M-axis; mounting the single-crystal sapphire substrate and a flexible polishing pad on a polishing device, and adding a polyhydroxy functional group compound and deionized water as a polishing fluid; providing charged abrasive particles on the surface of the flexible polishing pad; setting the load and rotation speed of the polishing device to cause relative friction between the single-crystal sapphire substrate and the flexible polishing pad, resulting in the formation of a low-hardness friction reaction layer between the single-crystal sapphire substrate and the polyhydroxy functional group compound in the polishing fluid under the frictional induction of the charged abrasive particles; and uniformly removing the reaction layer through the mechanical action of the charged abrasive particles with a spring-like effect. This invention can greatly improve the processing efficiency of atomic steps on single-crystal sapphire substrates.

The invention discloses an epitaxial two-dimensional semiconductor single crystal growth regulation and control method suitable for various single crystal sapphire morphologies, and belongs to the field of single crystal film preparation. According to the growth regulation and control method, by precisely regulating and controlling key parameters in a chemical vapor deposition (CVD) process, epitaxial growth of a wafer-level and high-quality single-crystal two-dimensional semiconductor film on the surface of a single-crystal sapphire substrate which has different surface morphologies and is not subjected to high-temperature annealing treatment can be realized, and the wafer-level and high-quality single-crystal two-dimensional semiconductor film is finally applied to preparation of a high-performance transistor device. The method provides a new direction for controllable preparation of a high-quality single-crystal two-dimensional semiconductor film, has remarkable advantages in universality and cost, and has important value for promoting development of high-performance logic devices based on two-dimensional semiconductors and advanced technological processes.

The application discloses a single-wall carbon nanotube horizontal array and a preparation method thereof. The preparation method comprises the following steps: S1, reconstructing the surface of a single-crystal sapphire substrate; S2, injecting a catalyst precursor into the reconstructed single-crystal sapphire substrate through ion injection; and S3, placing the substrate after the ion injection into a vertical spraying chemical vapor deposition device, so as to grow single-wall carbon nanotubes through vapor deposition perpendicular to the airflow of the vertical spraying. The growth area of the single-wall carbon nanotube horizontal array can reach one inch, the density can be up to 140 roots / micron, and the single-wall carbon nanotube horizontal array shows super high quality. The preparation method combines a laser scribing technology, an ion injection technology and a vertical spraying device, realizes the synchronous optimization of the surface reconstruction of a sapphire single-crystal substrate, the catalyst distribution thereon and the action mode of the airflow and the substrate, and thus the growth size, the density and the uniformity of the single-wall carbon nanotube horizontal array are significantly improved, and the method has the characteristics of controllability, stability and easy amplification.

The invention discloses a laser conduction and protection integrated guide rod for an extreme environment. The guide rod comprises a single crystal sapphire guide rod body, a CVD diamond window, an external spiral micro-channel cooling structure and a multi-layer protective kit. The single crystal sapphire guide rod body is responsible for efficiently conducting laser energy, and the CVD diamond window enhances the wear resistance of the end. The spiral micro-channel cooling structure achieves active cooling through compressed gas, and the temperature of the end is kept stable. The multi-layer protective sleeve provides heat insulation and mechanical and environmental protection, and ensures the reliability of the guide rod in an extreme environment.