Method for growing GaN crystal chip and GaN crystal chip

A substrate and crystal technology, applied in the field of growing GaN crystal substrates, can solve the problems that cannot be effectively used to produce GaN substrates, etc.

Inactive Publication Date: 2002-11-06
SUMITOMO CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the above techniques cannot be effectively used to produce freely fixed GaN substrates because there is no easy way to separate the substrates.

Method used

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  • Method for growing GaN crystal chip and GaN crystal chip
  • Method for growing GaN crystal chip and GaN crystal chip
  • Method for growing GaN crystal chip and GaN crystal chip

Examples

Experimental program
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Effect test

example 1

[0093] A single-crystal sapphire C-plane substrate with a diameter of 50.8 mm (about 2 inches) was used as the initial substrate, on which a 0.1 μm thick aluminum film was vapor-deposited to form a metal film. The substrate on which the aluminum film was deposited was analyzed by X-ray diffraction. As a result, not only the (0001) diffraction peak of sapphire but also the (111) diffraction peak of aluminum was observed, from which it can be confirmed that the aluminum film is C-axis oriented.

[0094] This substrate was placed in an MOCVD furnace (not shown) and heated at 650° C. for 30 minutes in a hydrogen atmosphere to clean the surface of the substrate and, at the same time, increase the degree of Al orientation. Then, in the same furnace at 650° C., a 0.1 μm-thick aluminum nitride film was grown on the surface of the aluminum film using TMA (trimethylaluminum trimethylaluminum) and ammonia as starting materials. Finally, the temperature of the substrate was raised to 105...

example 2

[0101] A single-crystal sapphire C-plane substrate with a diameter of 50.8 mm (about 2 inches) was placed in an MOCVD furnace as an initial substrate, and a GaN film with a thickness of 50 nm was grown at 600 °C with TMG and ammonia as initial materials. Thereafter, the temperature of the substrate was raised to 1050°C, and then the GaN film was grown to 1 µm.

[0102] A 0.1 μm-thick layer of gold was vapor-deposited on this substrate as a metal film, which was then analyzed by X-ray diffraction. As a result, (111) diffraction of the gold film was observed. This confirms that the gold film is C-axis oriented.

[0103]This substrate is again put into the MOCVD furnace. A 0.1 μm thick aluminum nitride film was grown in a furnace using TMA and ammonia as initial materials at a substrate temperature of 850°C. Then the substrate temperature was further raised to 1050°C, and the initial materials were changed to TMG and ammonia, and then a GaN film with a thickness of 2 μm was gr...

example 3

[0106] A single crystal sapphire C-plane substrate with a diameter of 50.8 mm (approximately 2 inches) was used as the initial substrate. Using the method of sputtering, 200nm thick silver is deposited on the substrate as a metal film. Then put the substrate into the MOCVD furnace, use TMG and ammonia as initial materials, and grow a GaN film with a thickness of 50nm on the surface of the silver film when the substrate temperature is 600°C. Then, the temperature of the substrate was raised to 1050°C, and a GaN film with a thickness of 1 µm was grown using TMG and ammonia as initial materials.

[0107] The substrate was then transferred to a HVPE furnace, where GaN was deposited to a thickness of 300 μm on the substrate surface. Here, ammonia and gallium chloride were used as starting materials for growth. The growth conditions were: pressure=atmospheric pressure, substrate temperature=1050°C, and growth rate=80 μm / hr.

[0108] The layered substrate obtained in this way was ...

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Abstract

A layer of metal film is deposited on the initial substrate, which can be any one of single crystal sapphire substrate, substrate with single crystal GaN film grown on the sapphire substrate or single crystal semiconductor substrate. A GaN film is then deposited on the metal film to form a layered substrate. Due to the adoption of the above structure, after the GaN film is grown, the GaN film can be easily separated from the original substrate, and a GaN crystal substrate with low defect concentration and not seriously contaminated by impurities can be produced in a simple manner. .

Description

technical field [0001] The invention relates to a method for growing a GaN crystal substrate and the GaN crystal substrate. Background technique [0002] GaN compound semiconductors, such as GaN, InGaN, and GaAlN, have attracted attention as materials useful as blue light emitting diodes (LEDs) and laser diodes (LDs). In addition, GaN compound semiconductors are used in optical devices due to their excellent heat resistance and environmental resistance, and GaN is also used in the development of electronic components due to these characteristics. [0003] However, it is difficult to grow large GaN compound semiconductor crystals, and for this reason, GaN substrates for practical use have not yet been produced. Sapphire as a substrate for growing GaN has been widely used in practice at present, and epitaxial growth of GaN on a single crystal sapphire substrate is a very common method, for example, using metal-organic vapor phase epitaxy. [0004] The lattice constants of th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/38C30B25/02C30B25/18H01L21/20H01L21/205H01L33/32H01S5/323H01S5/343
CPCC30B25/02C30B25/18C30B29/40C30B29/406H01L21/02381H01L21/02389H01L21/0242H01L21/02458H01L21/02491H01L21/02502H01L21/0254H01L21/02636Y10S117/915
Inventor 柴田真佐知黑田尚孝
Owner SUMITOMO CHEM CO LTD
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