Sapphire crystal growth method

Abstract

The invention discloses a growing method of sapphire crystal, which includes the steps that: alumina powder is crushed and grinded to ultra-micro powder particles; alumina particles are purified until the purity over 99.999 percent; the grinded and purified alumina with solvent is churned into pulpous state, pressed with a high pressure pump, delivered to a prilling nozzle, and sprayed into a high temperature drying tower, the pulpous state alumina which is sprayed from the prilling nozzle is dried into alumina particles and collected, and added with organic binder. The pure alumina powder particles are arranged in a mould, and added with the organic binder, and forms a body on a forcing press; the body is fired into an alumina block in half-done state in advance, arranged in a vacuum super-high-temperature furnace for preburning, thereby exhausting impure gas; the furnace is vacuumized and introduced with inert gas, and the alumina in half-done state is heated into liquid state, until the crystal growth is completed, and is solidified, cooled and contracted into monocrystal sapphire. The invention saves time for crystal growing, has low cost, is not limited in quality and size of the crystal, and fulfills the requirement of optic components, semiconductor components, communication components and other components.

Description

technical field [0001] The invention relates to a sapphire crystal growth method, which belongs to the field of single crystal sapphire (alumina single crystal) crystal growth technology. Background technique [0002] At present, the application of single-crystal sapphire substrates in modern technology products is very important. Taking light-emitting diodes (LEDs) in the optoelectronic industry as an example, Gallium Nitride (GaN) materials have been researched for more than two decades, but there has been no lattice constant The substrate (Substrate), so the crystal growth is not good, and p-type gallium nitride is not easy to make, so the progress is slow. These problems continued until 1983. Dr. S. Yoshida of Japan and others used aluminum nitride (AlN) is grown on a sapphire substrate at high temperature as a buffer layer, and then gallium nitride is grown on it, the crystallization is better. Later, Professor I. Akasaki of Nagoya University and others discovered that ...

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Problems solved by technology

[0010] The single crystal sapphire grown by the above sapphire growth method has impurity pollution, or its crystal quality and size are limited, it is difficult to meet the high performance requirements of optical, semiconductor, communication and other components, the cost is high, and the high temperature growth takes a long time. lack of

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