Memory element and memory
A storage element and storage layer technology, applied in the direction of static memory, digital memory information, information storage, etc., can solve the problem of thinning address lines, etc., and achieve the effects of reducing total power consumption, stable operation, and reduced power consumption
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[0068] Before describing specific embodiments of the present invention, an outline of the present invention will be described first.
[0069] In an embodiment of the present invention, information is recorded by reversing the magnetization direction of the storage layer of the storage element using the spin injection described above. The storage layer is composed of a magnetic material such as a ferromagnetic layer, and holds information based on the magnetization state (magnetization direction) of the magnetic material.
[0070] In the basic operation of reversing the magnetization direction of the magnetic layer by spin injection, a current having a certain threshold value (Ic) or higher is caused to flow in a direction perpendicular to the film surface of the memory element generated by the giant magnetoresistive element ( GMR elements) or magnetic tunnel junction elements (MTJ elements) in memory elements. Here, the polarity (direction) of the current depends on the magne...
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