Storage elements and storage devices

Abstract

The invention discloses a memory element and a memory device, wherein the memory element includes a layer structure. The layer structure includes: a storage layer with magnetization perpendicular to the film surface; a fixed magnetization layer with magnetization perpendicular to the film surface; an insulating layer arranged between the storage layer and the fixed magnetization layer; and a cover layer arranged on the storage layer The side of the side opposite to the side of the insulating layer side, in which spin-polarized electrons are injected in the lamination direction of the layer structure, so that the magnetization direction of the storage layer is changed, and information recording is performed, the effective feedback received by the storage layer The magnitude of the magnetic field is smaller than the saturation magnetization of the storage layer, and at least the surface of the cap layer that is in contact with the storage layer is made of a Ta film.

Description

technical field

[0001] The present invention relates to a memory element including a memory layer storing the magnetization state of a ferromagnetic layer as information and a magnetization fixed layer whose magnetization direction is fixed, and changing the magnetization direction of the memory layer by flowing current, and a memory device having the memory element. Background technique

[0002] In information devices such as computers, high-density DRAMs operating at high speeds have been widely used as random access memories.

[0003] However, DRAM is a volatile memory whose information is erased when power is turned off, and thus, a nonvolatile memory whose information is not erased is desired.

[0004] In addition, as a candidate of a nonvolatile memory, a magnetic random access memory (MRAM) in which information is recorded by magnetization of a magnetic material has attracted much attention, and thus has been developed.

[0005] The MRAM causes current to flow respec...

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