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Storage Elements and Storage Devices

A storage element and storage layer technology, applied in the direction of information storage, static memory, digital memory information, etc., can solve the problems of difficult current flow, thinning of address wiring, etc., to reduce the reversal current and write current reduction small, high-reliability effects

Active Publication Date: 2016-08-03
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] However, with the miniaturization of the elements constituting MRAM, the address wiring becomes thinner, making it difficult to pass a sufficient current

Method used

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  • Storage Elements and Storage Devices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0074] Hereinafter, embodiments of the present invention will be described in the following order.

[0075] 1. Outline of the memory element of the embodiment

[0076] 2. Structure of Embodiment

[0077] 3. Experiment

[0078] 1. Outline of the memory element of the embodiment

[0079] First, an overview of a memory element according to an embodiment of the present invention will be described.

[0080] According to an embodiment of the present invention, recording of information is performed by reversing the magnetization direction of the storage layer of the storage element using the above-described spin injection.

[0081] The storage layer is composed of a magnetic material such as a ferromagnetic layer, and holds information by the magnetization state (magnetization direction) of the magnetic material.

[0082] Although will be described in detail later, the memory element has the figure 2 A layer structure of an example is shown in , and includes a magnetic layer 17...

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PUM

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Abstract

The invention discloses a storage element and a storage device, wherein the storage element includes a layer structure, and the layer structure includes: a storage layer, which has magnetization perpendicular to the film surface, and whose magnetization direction changes corresponding to information; a magnetization fixed layer, which has magnetization perpendicular to the film surface; and an insulating layer disposed between the storage layer and the fixed magnetization layer. Spin-polarized electrons are injected in the lamination direction of the layer structure, so that the magnetization direction of the storage layer is changed, and information recording is performed on the storage layer, the magnitude of the effective diamagnetic field received by the storage layer is smaller than the saturation magnetization of the storage layer, Also, the storage layer and the fixed magnetization layer have film thicknesses such that the interface magnetic anisotropy energy becomes larger than the diamagnetic field energy.

Description

technical field [0001] The present invention relates to a memory element including a memory layer storing the magnetization state of a ferromagnetic layer as information and a magnetization fixed layer whose magnetization direction is fixed, and changing the magnetization direction of the memory layer by flowing current, and a memory device having the memory element. Background technique [0002] In information equipment such as computers, high-density DRAMs operating at high speeds have been widely used as random access memories. [0003] However, DRAM is a volatile memory whose information is erased when power is turned off, and thus, a nonvolatile memory whose information is not erased is desired. [0004] In addition, as a candidate of a nonvolatile memory, a magnetic random access memory (MRAM) in which information is recorded by magnetization of a magnetic material has attracted much attention, and thus has been developed. [0005] The MRAM causes current to flow resp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/16
CPCG11C11/16G11C11/161
Inventor 肥后丰细见政功大森广之别所和宏山根一阳内田裕行
Owner SONY CORP
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