Memory device and memory

Abstract

A memory device is provided. The memory device includes a memory layer and a fixed-magnetization layer. The memory layer retains information based on a magnetization state of a magnetic material. The fixed-magnetization layer is formed on the memory layer through an intermediate layer made of an insulating material. The information is recorded on the memory layer with a change in a magnetization direction of the memory layer caused by injecting a spin-polarized electron in a stacked direction. A level of effective demagnetizing field, which is received by the memory layer, is smaller than a saturation-magnetization level of magnetization of the memory layer.

Description

[0001] Cross References to Related Applications [0002] The present invention contains subject matter related to Japanese Patent Application JP2007-066907 filed in the Japan Patent Office on Mar. 15, 2007, the entire content of which is hereby incorporated by reference. technical field [0003] The present invention relates to a storage element comprising a storage layer for storing a magnetization state of a ferromagnetic layer and a magnetization fixed layer having a fixed magnetization direction, wherein the magnetization direction of the storage layer changes with the flow of electric current. The invention also relates to a memory comprising such a memory element, which is suitable for use in a non-volatile memory. Background technique [0004] A high-density DRAM capable of high-speed operation has been used as a random access memory in information equipment such as a computer. [0005] However, DRAM is volatile memory in which information disappears when power is re...

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Problems solved by technology

[0039] If the thermal stability of the storage layer cannot be ensured, the magnetization direction after reversal may be reversed again due to heat, so write errors may occur

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