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Two-dimensional material phase change memory cell

A two-dimensional material and memory cell technology, applied in the field of microelectronics, can solve the problems of large thermal stress and low electrical and thermal efficiency of phase-change memory cells, and achieve the effects of small high pressure resistance, reduced heat loss, and high elastic coefficient

Active Publication Date: 2019-09-06
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the defects of the prior art, the purpose of the present invention is to provide a two-dimensional material phase-change memory unit, which aims to solve the problems of low electrothermal efficiency and large thermal stress of the phase-change memory unit

Method used

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Examples

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Embodiment 1

[0035] Such as figure 1 As shown, the present invention provides a two-dimensional material phase-change memory unit, including a substrate 1, a lower electrode 2, a first insulating layer 3, a phase-change layer 4, a second An insulating layer 5 , an upper electrode 6 , and a two-dimensional material layer 7 , wherein the two-dimensional material layer 7 is disposed on the contact surface between the phase change layer 4 and the lower electrode 2 .

[0036] Specifically, the substrate 1 may be a silicon single wafer substrate or other semiconductor material substrates.

[0037] Specifically, the lower electrode 2 is a conductive material that requires low resistivity and stable properties, and materials such as TiW, TiN, HfN, Ag, Al, Cu, W, Ta, and Pt can be used. The lower electrode can be made of the same material as the lower electrode 2 .

[0038] Specifically, the first insulating layer 3 is an insulating material, which requires high resistivity, low thermal conductiv...

Embodiment 2

[0042] Different from the T-shaped structure of the embodiment, embodiment 2 provides a phase-change memory unit with a layered structure, such as figure 2 As shown, the difference lies in the structure of the phase change layer 4 and the two-dimensional material layer 7 is disposed between the upper electrode 6 and the lower electrode 2 and the phase change layer 4 at the same time.

Embodiment 3

[0044] Such as image 3 As shown, a trench structure phase-change memory cell is provided, the difference lies in the structure of the phase-change layer 4 and the two-dimensional material layer 7 is disposed between the upper electrode 6 and the lower electrode 2 and the phase-change layer 4 at the same time.

[0045] Figure 4 to Figure 9 The specific preparation process of the two-dimensional material phase-change memory unit of Example 1 is shown:

[0046] Step 1: On the clean and dry silicon substrate 1, a TiW thin film for the lower electrode is prepared by magnetron sputtering. The thickness of the lower electrode 2 is 100 nm, and the width of the lower electrode 2 of TiW is controlled to 15 um by photolithography technology. The method for preparing the TiW lower electrode 2 can be selected from one of sputtering, evaporation, chemical vapor deposition, and plasma enhanced chemical vapor.

[0047] Step 2: A molybdenum disulfide thin film is grown on the surface of the ...

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Abstract

The present invention discloses a two-dimensional material phase change memory cell, which comprises a substrate and a lower electrode, a phase change layer, an upper electrode and a two-dimensional material layer sequentially arranged on the substrate from bottom to top. The two-dimensional material layer is arranged on a contact surface between the phase change layer and the lower electrode andis also arranged on a contact surface between the phase change layer and the upper electrode. The two-dimensional material used in the invention has a very small thermal conductivity. In addition to the thermal resistance formed by the interface, the two-dimensional material itself reduces the heat loss and writing current and improves the electrothermal efficiency. The two-dimensional material layer also has very good mechanical properties such as the high elasticity coefficient, high compressive property and fracture strength, and can play a role of buffering. In the phase change process, the phase change layer is subjected to the smaller thermal expansion extrusion stress and strain, so the stress and strain between the phase change layer and the electrode layer during the phase changetemperature rise can be effectively reduced, and the service life and write-erase times of the device are increased.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and more specifically relates to a two-dimensional material phase-change memory unit. Background technique [0002] Under the circumstances that the capacity and storage speed of traditional memory are difficult to meet the needs of the new era, phase change memory has become a popular research object in the world due to its advantages of high read and write speed, high data retention, small cell size and non-volatility. , is considered to be the storage device most likely to replace flash memory. [0003] The working principle of phase change memory is based on the huge resistance difference between phase change materials in the crystalline state and the amorphous state, in which the crystalline state shows low resistance, and the amorphous state shows high resistance, which can respectively represent binary states "0", " 1". When the phase change memory is working, an electric pulse ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/231H10N70/8616
Inventor 程晓敏温敏吴文豪缪向水
Owner HUAZHONG UNIV OF SCI & TECH
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