Storage element, storage device, and magnetic head

A storage unit and storage layer technology, applied in information storage, magnetic recording head, static memory, etc., can solve problems such as reducing power consumption and increasing capacity, reducing power consumption, preventing the increase of reverse current, and reducing writing effect of current

Active Publication Date: 2015-05-27
SONY CORP
View PDF8 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is expected that MRAM will be developed for code storage or work memory in the future due to reasons of high-speed operation and reliability; however, in reality, there are difficulties in reducing power consumption or increasing capacity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Storage element, storage device, and magnetic head
  • Storage element, storage device, and magnetic head
  • Storage element, storage device, and magnetic head

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0044] Hereinafter, some embodiments of the present disclosure will be described in the following order.

[0045]

[0046]

[0047]

[0048]

[0049]

[0050]

[0051] First, the configuration of a storage device constituting an embodiment of the present disclosure will be described.

[0052] exist figure 1 and figure 2 A schematic diagram of a memory device according to an embodiment is shown in . figure 1 is the stereogram, and figure 2 is a cross-sectional view.

[0053] Such as figure 1 As shown, for example, the memory device of the embodiment may include the memory cell 3 constituted by ST-MRAM capable of retaining information by magnetization state. The memory cells 3 may be arranged near intersections of two kinds of address lines (eg, word lines and bit lines) that are orthogonal to each other.

[0054] Specifically, drain region 8, source region 7, and gate electrode 1 constituting selection transistors that select individual memory devices may be...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

Provided are a storage element for which TMR characteristics can be improved, a storage device equipped with the storage element, and a magnetic head. The storage element has a layer structure including a storage layer in which the magnetization direction is changed in response to information, a magnetization fixed layer which has magnetization orthogonal to the film surface as a reference for the information stored in the storage layer, and an intermediate layer which is provided between the storage layer and the magnetization fixed layer and is made of a nonmagnetic material. Carbon is inserted into the intermediate layer and a current is supplied in the stacking direction of the layer structure so that the magnetization direction of the storage layer is changed to record information in the storage layer.

Description

technical field [0001] The present disclosure relates to a memory cell and a memory device for recording using spin torque magnetization reversal, and a magnetic head. [0002] List of prior art documents [0003] patent documents [0004] Patent Document 1: JP 2003-17782A [0005] Patent Document 2: US 6,256,223B1 specification [0006] Patent Document 3: JP 2008-227388A [0007] non-patent literature [0008] Non-Patent Document 1: Physical Review (Physical Review) B, 54, 9353 (1996) [0009] Non-Patent Document 2: Journal of Magnetism and Magnetic Materials, 159, L1 (1996) [0010] Non-Patent Document 3: Nature Materials, 5, 210 (2006) Background technique [0011] According to the rapid development of various information devices ranging from large-capacity servers to mobile terminals, people have been pursuing higher performance of their constituent elements (such as memory or logic elements), such as high integration, high speed, and low power consumption. In p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8246G11B5/39H01L27/105H01L43/08H01L43/10
CPCG11B5/3909G11C11/161G11C2213/35H10B61/22H10N50/10H10N50/85H10N50/80
Inventor 内田裕行细见政功大森广之别所和宏肥后丰浅山徹哉山根一阳
Owner SONY CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap