Electrically rewritable non-volatile memory element and method of manufacturing the same

A non-volatile storage and component technology, used in electrical components, semiconductor/solid-state device manufacturing, information storage, etc., can solve the problems of recording layer damage, inability to apply electrode protective film, low thermal efficiency, etc., and achieve the effect of reducing the amount of damage
CN100492696CInactive Publication Date: 2009-05-27PS4 LUXCO SARL
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Patents(China)
Current Assignee / Owner
PS4 LUXCO SARL
Publication Date
2009-05-27
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

A non-volatile memory element includes a recording layer that includes a phase change material, a lower electrode provided in contact with the recording layer, an upper electrode provided in contact with a portion of the upper surface of the recording layer, a protective insulation film provided in contact with the other portion of the upper surface of the recording layer, and an interlayer insulation film provided on the protective insulation film. High thermal efficiency can thereby be obtained because the size of the area of contact between the recording layer and the upper electrode is reduced. Providing the protective insulation film between the interlayer insulation film and the upper surface of the recording layer makes it possible to reduce damage sustained by the recording layer during patterning of the recording layer or during formation of the through-hole for exposing a portion of the recording layer.
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Description

Technical field

[0001] The present invention relates to an electrically rewritable nonvolatile memory element and a method of manufacturing the element. More specifically, the present invention relates to an electrically rewritable nonvolatile memory element having a recording layer including a phase change material and a method of manufacturing the element. Background technique

[0002] Hierarchical storage devices are used for personal computers and servers. There are lower-level memories that are cheap and provide high storage capacity, while higher-level memories provide high-speed operation. The bottom level generally consists of magnetic storage such as hard drives and tapes. In addition to non-volatility, magnetic storage is an inexpensive method of storing much larger amounts of information than solid-state devices such as semiconductor memory. However, in contrast to the sequential access operations of magnetic storage devices, semiconductor memories are much faster and ...

Claims

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