Memory element and memory apparatus

A storage element and storage layer technology, applied in the direction of electrical components, information storage, static memory, etc., to achieve the effects of enhancing anisotropy, providing operating margin, and reducing power consumption

Active Publication Date: 2013-06-05
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, MRAM has challenges associated with reducing power consumption and increasing capacity

Method used

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  • Memory element and memory apparatus
  • Memory element and memory apparatus
  • Memory element and memory apparatus

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Experimental program
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Embodiment Construction

[0051] Embodiments of the present invention will be described in the following order

[0052] 1. Configuration of the storage device according to the embodiment

[0053] 2. General Description of Storage Elements According to Embodiments

[0054] 3. Concrete structure of the embodiment

[0055] 4. Examples

[0056] 5. replace

[0057] 1. Configuration of the storage device according to the embodiment

[0058] First, the configuration of a storage device according to an embodiment of the present invention will be described.

[0059] figure 1 and figure 2 Each shows a schematic diagram of a storage device according to an embodiment. figure 1 is a stereoscopic view, and figure 2 is a cross-sectional view.

[0060] Such as figure 1 As shown, in the memory device according to the embodiment, the memory element 3 including ST-MRAM is arranged near the intersection of two kinds of address interconnections (for example, word line and bit line) perpendicular to each other, ...

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PUM

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Abstract

The invention discloses a memory element and a memeory apparatus. The memory element has a layered structure, including a memory layer that has magnetization perpendicular to a film face in which a magnetization direction is changed depending on information, and includes a Co-Fe-B magnetic layer, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, a magnetization-fixed layer having magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer, a first oxide layer and a second oxide layer.

Description

technical field [0001] The present invention relates to a storage element and a storage device having a plurality of magnetic layers and recording using spin torque magnetization switching. Background technique [0002] With the rapid development of various information devices ranging from mobile terminals to large-capacity servers, higher performance improvements, such as higher integration, increased speed, have been pursued in elements constituting the devices such as storage elements and logic elements large and lower power consumption. In particular, semiconductor nonvolatile memory has made remarkable progress, and flash memory, which is a large-capacity file storage, has spread at a rate at which hard disk drives are being replaced by flash memory. At the same time, the research and development of FeRAM (Ferroelectric Random Access Memory), MRAM (Magnetic Random Access Memory), PCRAM (Phase Change Random Access Memory), etc. code storage or use them as working memor...

Claims

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Application Information

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IPC IPC(8): H01L43/08G11C11/15
CPCG11C11/161G11C11/16H10B61/22H10N50/80H10N50/10G11C11/15
Inventor 山根一阳细见政功大森广之别所和宏肥后丰浅山彻哉内田裕行
Owner SONY CORP
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