Storage device amd method for forming storage

Abstract

An improved magnetoresistive memory device has a reduced distance between the magnetic memory element and a conductive memory line used for writing to the magnetic memory element. The reduced distance is facilitated by forming the improved magnetoresistive memory device according to a method that includes forming a mask over the magnetoresistive memory element and forming an insulating layer over the mask layer, then removing portions of the insulating layer using a planarization process. A conductive via can then be formed in the mask layer, for example using a damascene process. The conductive memory line can then be formed over the mask layer and conductive via.

Description

technical field [0001] The present invention relates to a semiconductor storage device; especially a semiconductor storage device using a magnetoresistive structure to store data. Background technique [0002] Magnetic random access memory (MRAM) is a type of non-volatile memory that uses magnetism instead of electricity to store data. figure 1 is a partial schematic diagram showing a MRAM array 10 . The MRAM array 10 includes a plurality of memory cells 12-19, and a series of wires 40-48. Each memory cell 12-19 includes a magnetoresistive (MR) memory element 20-27 and a transistor 30-37. figure 1 The structure shown is also referred to as a 1T1MTJ (one transistor, one MTJ) structure. [0003] Such as figure 1 As shown, the transistors 30-33 are coupled to each other through a word line WL140, and the transistors 34-37 are coupled to each other through a word line WL241, wherein the word lines 40 and 41 form the gates of the transistors 30-37. The transistors 34-37 are ...

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Problems solved by technology

But since the top write line is used to generate a magnetic field to write to the MTJ, this write line needs to be close to the MTJ

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