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Magnetic component for achieving spinning torque transfer switching, fabrication method of magnetic component and magnetic storage device

A magnetic element, spin torque technology, applied in the field of magnetic storage, can solve problems such as reducing thermal stability

Inactive Publication Date: 2017-09-29
HUBEI ZHONGBU HUIYI DATA TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In actual engineering practice, the technical challenge is still to reduce the spin torque transfer switching current or write current while maintaining the thermal stability required by the design

Method used

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  • Magnetic component for achieving spinning torque transfer switching, fabrication method of magnetic component and magnetic storage device
  • Magnetic component for achieving spinning torque transfer switching, fabrication method of magnetic component and magnetic storage device
  • Magnetic component for achieving spinning torque transfer switching, fabrication method of magnetic component and magnetic storage device

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Embodiment Construction

[0032] In order to make the objectives, technical solutions and advantages of the present invention clearer, the following further describes the present invention in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.

[0033] The present invention aims to realize a magnetic multilayer film spin valve device and a spin torque transfer magnetic random access memory (STT-MRAM) with perpendicular magnetic anisotropy characteristics (perpendicular anisotropy). In such a magnetic spin valve structure, the magnetic pinned layer and the free layer have demagnetization energy perpendicular to the film plane direction and anisotropic energy corresponding to perpendicular anisotropy. The perpendicular anisotropy energy is greater than the demagnetization energy perpendicular to the film plane. According to the magnet...

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Abstract

The invention discloses a magnetic component for achieving spinning torque transfer switching, a fabrication method of the magnetic component and the magnetic storage device. The magnetic component comprises a dual-pin perpendicular anisotropy magnetic fixed layer, non-magnetic spacing layers and a perpendicular anisotropy magnetic free layer, wherein the perpendicular anisotropy magnetic free layer is arranged between the dual non-magnetic spacing layers and is provided with demagnetization energy and anisotropy energy, the demagnetization energy is perpendicular to a film plane direction, the anisotropy energy is correspondingly perpendicular to anisotropy, and the perpendicular anisotropy energy is larger than the demagnetization energy perpendicular to the film plane direction. When a writing current passes through the magnetic component, the perpendicular anisotropy magnetic free layer can be switched between a parallel magnetic state perpendicular to a plane direction and a reverse parallel magnetic state by a spinning torque transfer effect so as to achieve the purpose of magnetic storage.

Description

Technical field [0001] The present invention belongs to the field of magnetic storage technology, and more specifically, relates to a magnetic element, a preparation method and a magnetic storage device for realizing spin torque transmission switching. Background technique [0002] The perpendicular magnetic anisotropic magnetic tunnel junction (MTJ) is a core component of magnetic multilayer film spin valve devices or magnetic storage bit cells. It consists of a thin-film insulating layer and two ferromagnetic layers with perpendicular magnetic anisotropy separated by it to form a high spin polarization tunnel junction. The application of thin-film insulating layers allows electrons to tunnel from one ferromagnetic layer to another. In the case of a crystalline thin-film insulating layer, the ferromagnetic layer forms a parallel and anti-parallel state under the action of an external magnetic field or spin torque transmission. As a result, the electronic energy band structure ...

Claims

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Application Information

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IPC IPC(8): H01L43/08H01L43/02H01L27/22H01L43/12
CPCH10B61/22H10N50/80H10N50/10H10N50/01
Inventor 刁治涛李占杰罗逍
Owner HUBEI ZHONGBU HUIYI DATA TECH
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