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Magnetic element, memory system and write operation method thereof

A magnetic element and magnetic technology, applied in the field of magnetic storage, can solve the problems of exponential rate increase of write current, unsustainable, difficult expansion of MRAM memory, etc., achieve high speed and recording density, stable thermal stability, and increase spin torque The effect of transmission efficiency

Active Publication Date: 2016-02-24
HUBEI ZHONGBU HUIYI DATA TECH
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Problems solved by technology

[0005] The technical problem in the prior art is that the write current required by traditional magnetic random access memory (MRAM) increases exponentially with the increase in recording density.
Therefore, MRAM memory based on traditional magnetic field switch technology has difficult to expand and unsustainable problems

Method used

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  • Magnetic element, memory system and write operation method thereof
  • Magnetic element, memory system and write operation method thereof
  • Magnetic element, memory system and write operation method thereof

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Embodiment Construction

[0048]In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0049] The invention utilizes the switching mechanism of the in-plane magnetization film of the magnetic spin valve under the spin torque transmission effect to realize the magnetic storage and recording of data. Design and fabrication methods of the magnetic element and a magnetic storage system such as Magnetic Random Access Memory ("MRAM") are also provided.

[0050] Embodiments of the present invention provide structures of magnetic elements with in-plane magnetization (layers), and the magnetization layers or local structures may still have partial perpendicular anisotropy. The perpendicular a...

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Abstract

The invention provides a magnetic element, a memory system and a write operation method thereof. The magnetic element comprises a magnetic fixation layer, a non-magnetic isolation layer, a magnetic free layer and a cover layer. The non-magnetic isolation layer is arranged between the magnetic fixation layer and the magnetic free layer. The cover layer connects the magnetic free layer and an external semiconductor transistor circuit. The magnetic free layer has demagnetizing energy perpendicular to the membrane plane direction and anisotropy energy perpendicular to anisotropy. The anisotropy energy perpendicular to anisotropy is lower than the demagnetizing energy perpendicular to the membrane plane direction. When the write current flows through the magnetic element, the magnetic free layer can be switched between parallel and anti-parallel magnetic states in the plane direction to achieve the purpose of magnetic storage under a spin torque transmission effect.

Description

technical field [0001] The invention belongs to the technical field of magnetic storage, and more specifically relates to a magnetic element, a memory system and a writing operation method thereof. Background technique [0002] The initial elucidation of the spin torque transfer mechanism and subsequent in-depth physical property studies have laid the foundation for the development and potential commercial application of spin torque transfer and magnetic switch technology. One of the application directions is spin torque transfer magnetic random access memory (STT-MRAM). In terms of magnetic properties, the rotary torque transfer switch technology is revolutionary in replacing the concept and process of traditional magnetic random access memory (MRAM). At the same time, this technology solves the difficulty of expansion and unsustainability of MRAM memory based on traditional magnetic field switch technology. This characteristic of spin torque transfer magnetic random acce...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08G11C11/16H01L43/00H10N50/10
CPCG11C11/161H10N50/01H10N50/10
Inventor 刁治涛李占杰罗逍
Owner HUBEI ZHONGBU HUIYI DATA TECH
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