Crystal growth methods and systems

Abstract

Methods and systems related to an improved controlled heat extraction system for crystal growth, such as sapphire crystal growth are described, including methods and systems for mechanical probe-based and pyrometer-based inspection and automation processes, methods and systems for avoiding fusion of components, methods and systems for purging an inspection window, and methods and systems related to alternative crucible shapes.

Description

[0001] Cross References to Related Applications [0002] This application claims priority under 35 U.S.C. § 120 to co-pending U.S. nonprovisional patent application Serial No. 12 / 588,656, filed October 22, 2009, publication No. US 2010-0101387, Titled "Crystal Growth System and Method Thereof," the entire contents of that application are hereby incorporated by reference. This U.S. Nonprovisional Patent Application Serial No. 12 / 588,656 claims priority under 35 U.S.C. § 119 to U.S. Provisional Patent Application Serial No. 61 / 108,213, filed October 24, 2008, and entitled " System and Method for Growing Crystals", the entire contents of which application are hereby incorporated by reference. This application also claims priority under 35 U.S.C. § 119 to U.S. Provisional Patent Application No. 61 / 379,358, filed September 1, 2010, and entitled "High Volume Sapphire Core Production," which The entire content of is hereby incorporated by reference. technical field [0003] The pr...

AI Technical Summary

Problems solved by technology

[0014] However, the above methods all have one or more disadvantages, such as: 1) presence of air bubbles in the crystal, 2) defects and lattice distortion, 3) problematic crucible design, 4) difficulty in measuring the actual crystal growth rate, 5) crystal growth size Limited and 6) a-axis growth process results in prohibitive cost

These disadvantages generally result in lower wafer yields at higher cost

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