Wet surface processing technique used for manufacturing high efficiency crystalline silicon solar cells

A crystalline silicon solar cell, wet processing technology, applied in the direction of post-processing, post-processing details, sustainable manufacturing/processing, etc., can solve the problems of increasing battery cost, difficult fragmentation rate, etc., to reduce process cost and improve quality. Effect

Active Publication Date: 2012-10-24
TRINASOLAR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In actual production, it is often necessary to introduce a single-side polishing cleaning machine into the battery manufacturing process, which greatly increases the cost per watt of the battery.

Method used

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  • Wet surface processing technique used for manufacturing high efficiency crystalline silicon solar cells
  • Wet surface processing technique used for manufacturing high efficiency crystalline silicon solar cells

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment 1

[0037] A surface wet treatment process for making high-efficiency crystalline silicon solar cells has the following steps:

[0038] (1) Pre-cleaning: Place the silicon wafer in absolute ethanol for ultrasonic cleaning, and then treat it with RCA solution and hydrofluoric acid to remove inorganic metal ions and organic particle pollutants.

[0039] The silicon wafer is placed in absolute ethanol for 10 minutes for ultrasonic cleaning, and the RCA solution has a volume ratio of DI:NH 4 OH:H 2 o 2 =4:1:1 solution, the RCA solution treatment temperature is 65-85°C, the treatment time is 5-20min, the hydrofluoric acid concentration is 5wt%, and the hydrofluoric acid immersion time is 2min.

[0040] After the above treatment, the inorganic metal ions and organic particle pollutants on the surface of the silicon wafer can be effectively removed.

[0041] (2) Damage and thinning of the silicon wafer: the mechanically damaged layer on the surface of the silicon wafer and the residua...

specific Embodiment 2

[0052] A surface wet treatment process for making high-efficiency crystalline silicon solar cells has the following steps:

[0053] (1) Pre-cleaning: Place the silicon wafer in absolute ethanol for ultrasonic cleaning, and then treat it with RCA solution and hydrofluoric acid to remove inorganic metal ions and organic particle pollutants.

[0054] The silicon wafer is placed in absolute ethanol for 10 minutes for ultrasonic cleaning, and the RCA solution has a volume ratio of DI:NH 4 OH:H 2 o 2 =4:1:1 solution, the RCA solution treatment temperature is 65-85°C, the treatment time is 5-20min, the hydrofluoric acid concentration is 5wt%, and the hydrofluoric acid immersion time is 2min.

[0055] After the above treatment, the inorganic metal ions and organic particle pollutants on the surface of the silicon wafer can be effectively removed.

[0056] (2) Damage and thinning of the silicon wafer: the mechanically damaged layer on the surface of the silicon wafer and the residua...

specific Embodiment 3

[0067] A surface wet treatment process for making high-efficiency crystalline silicon solar cells has the following steps:

[0068] (1) Pre-cleaning: Place the silicon wafer in absolute ethanol for ultrasonic cleaning, and then treat it with RCA solution and hydrofluoric acid to remove inorganic metal ions and organic particle pollutants.

[0069] The silicon wafer is placed in absolute ethanol for 10 minutes for ultrasonic cleaning, and the RCA solution has a volume ratio of DI:NH 4 OH:H 2 o 2 =4:1:1 solution, the RCA solution treatment temperature is 65-85°C, the treatment time is 5-20min, the hydrofluoric acid concentration is 2.5wt%, and the hydrofluoric acid immersion time is 2min.

[0070] After the above treatment, the inorganic metal ions and organic particle pollutants on the surface of the silicon wafer can be effectively removed.

[0071] (2) Damage and thinning of the silicon wafer: the mechanically damaged layer on the surface of the silicon wafer and the resid...

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Abstract

The invention relates to a wet surface processing technique used for manufacturing high efficiency crystalline silicon solar cells. The surface wet processing technique comprises the following steps of (1) pre-washing a silicon chip; (2) removing damage and thinning the silicon chip, wherein the upper and lower surfaces of the silicon chip are in a polishing shape; (3) coating protection: depositing a protective film on a single surface of the silicon chip; (4) surface structuralizing: obtaining a pyramid suede structure with a depth of 4-10 microns for the surface of the silicon chip which has no protective film, and meanwhile keeping a plane state for the surface of the other side of the silicon chip which has the protective film; (5) removing the protective film; (6) performing RCA washing, and (7) enhancing and optimizing for the surface appearance and forming a wet passivated surface. With the adoption of the wet surface processing method provided by the invention, the requirement on single-sided cleaning and texturing of the substrate of the thin silicon chip in the manufacturing process of high efficiency solar cells can be simply satisfied; the cleaning process quality and the battery efficiency and yield can be effectively improved; and moreover, no additional relevant cleaning equipment is required, and thus, the process cost is saved.

Description

technical field [0001] The invention relates to the field of manufacturing high-efficiency solar cells using crystalline silicon materials as substrates, in particular to a surface wet treatment process for making high-efficiency crystalline silicon solar cells. Background technique [0002] Generally, back-passivated solar cells with selective emitters have attracted much research attention because of their structural advantages and high conversion efficiency. This battery structure has two main features: First, a heavy diffusion field with relatively high doping concentration and deep junction area is generated in the area below and near where the front electrode will be formed, while a low doping concentration is generated at other positions on the front surface. And the light diffusion area with shallow junction depth can effectively reduce the contact resistance and increase the short-wave response of the battery to improve the photoelectric conversion efficiency; Impr...

Claims

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Application Information

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IPC IPC(8): H01L31/18C30B33/10
CPCY02P70/50
Inventor 王栋良
Owner TRINASOLAR CO LTD
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