Radio frequency power amplifier circuit with automatic output power regulation function

Abstract

The invention provides a radio frequency power amplifier circuit with automatic output power regulation function, which comprises a biasing circuit, a radio frequency power amplifier circuit and an output power detecting circuit, which are connected in sequence, wherein the output end of the output power detecting circuit is connected with the input end of the biasing circuit; the biasing circuit is used for providing a biasing voltage to the radio frequency power amplifier circuit, and the biasing circuit automatically regulates according to the output voltage value of the output power detecting circuit so as to control the output power of the radio frequency power amplifier circuit; the radio frequency power amplifier circuit amplifies the input signal and outputs power to drive the successive load; and the output power detecting circuit detects the output power value of the radio frequency power amplifier circuit, converts the power value into corresponding DC (Direct Current) voltage value, outputs the DC voltage value and provides the DC voltage value to the biasing circuit. The radio frequency power amplifier circuit has the advantages of automatically regulating the output power to weaken the effect of such factors on the output power value of the radio frequency power amplifier as technique error and temperature change, and the like, and the radio frequency power amplifier circuit can be applied in wireless transceiver chips.

Description

technical field [0001] The invention belongs to the technical field of radio frequency integrated circuit design, and relates to an on-chip integrated radio frequency power amplifier circuit with automatic adjustment of output power. Background technique [0002] Traditional RF analog front-ends mostly use SiGe, GaAs, HBT or Bipolar processes, which have characteristic frequencies above 100GHz and good current drive capability. Generally speaking, the operating frequency of the transistor should be lower than 1 / 10 of the characteristic frequency, so the above process is widely used in various RFIC modules. However, with the development of submicron and deep submicron technology, the CMOS process has undergone rapid development, and its channel length has been continuously reduced, from 0.25 μm and 0.18 μm to 0.13 μm, and even the current 90nm and 45nm, More and more breakthroughs have been made in the application of CMOS technology in the field of radio frequency. This tran...

AI Technical Summary

Problems solved by technology

The design of the power amplifier usually requires its output power value to be stable, but due to the influence of process deviation, temperature change and other factors, the output power value will change in a large range, which has not considered that the amplitude of the input signal is affected by process deviation and temperature The influence of the change, if the change of the input signal is considered, the power value output by the power amplifier will change in a wider range

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