High-temperature liquid-phase synthesis method of cadmium telluride powder

A liquid phase synthesis, cadmium telluride technology, applied in the direction of binary selenium/tellurium compounds, etc., can solve the problems of inability to realize continuous production, low product purity, long reaction cycle, etc., and achieve continuous preparation and short process flow. , the effect of simple equipment

Active Publication Date: 2013-01-02
SICHUAN UNIV
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  • Summary
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  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantages are: the synthesis process needs to load and seal the tube, break the tube to take out the material, cannot realize continuous production, the output is not high and the reaction cycle is long; in addition, the prepared cadmium telluride is easy to agglomerate and needs to be ground and processed into powder. The process is easy to introduce impurities, etc., resulting in low product purity

Method used

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  • High-temperature liquid-phase synthesis method of cadmium telluride powder
  • High-temperature liquid-phase synthesis method of cadmium telluride powder
  • High-temperature liquid-phase synthesis method of cadmium telluride powder

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Put about 1~6mm cadmium block and tellurium block, purity grade 5N, into the A and B ends of the "Y"-shaped tube with a molar ratio of 1:1, the angle between A and B ends is 5°, and the The "Y" shaped quartz tube is placed horizontally into the open and close "Y" shaped furnace with three-stage heating; then the quartz tube is evacuated to 1.0×10 -3 Pa, and heat the A, B, and C sections of the "Y"-shaped quartz tube to 360°C, 480°C and 800°C respectively, and keep warm until the test is completed. After tellurium and cadmium are melted into a liquid, place the three-stage heated open-close furnace vertically through the bracket 8, then close the vacuum valves 1 and 2, open the vent valves 3, 4 and the vent valve 5, and introduce 0.01Mpa Ar gas, so that the tellurium and cadmium liquids are sprayed and atomized from nozzles 5 and 6 respectively. The aperture of the atomized nozzle is 2.0mm. The bottom of the C-end of the Y" shaped quartz tube. After the atomization is ...

Embodiment 2

[0020] Put 3-6mm cadmium block and tellurium block, purity grade 6N, into the A and B ends of the "Y"-shaped tube at a molar ratio of 1:1, the angle between A and B ends is 80°, and the " The Y"-shaped quartz tube is placed horizontally into the open-close "Y"-shaped furnace with three-stage heating; then the quartz tube is evacuated to 1.0×10 -3 Pa, and heat the A, B, and C sections of the "Y"-shaped quartz tube to 370°C, 540°C and 900°C respectively, and keep warm until the test is completed. After tellurium and cadmium are melted into a liquid, place the three-stage heating split furnace vertically through the bracket 8, then close the vacuum valves 1 and 2, open the vent valves 3, 4 and the vent valve 5, and introduce 0.10Mpa Ar gas, so that the tellurium and cadmium liquids are sprayed and atomized from nozzles 5 and 6 respectively. The aperture of the atomized nozzle is 1.0mm. The bottom of the C-end of the Y" shaped quartz tube. After the atomization is completed, sto...

Embodiment 3

[0024] Put 2~6mm cadmium block and tellurium block, purity grade 7N, into the A and B ends of the "Y"-shaped tube at a molar ratio of 1:1, the angle between A and B ends is 110°, and the " The Y"-shaped quartz tube is placed horizontally into the open-close "Y"-shaped furnace with three-stage heating; then the quartz tube is evacuated to 8.0×10 -4 Pa, and heat the A, B, and C sections of the "Y"-shaped quartz tube to 350°C, 540°C and 600°C respectively, and keep warm until the test is completed. After tellurium and cadmium are melted into a liquid, place the three-stage heating open-close furnace vertically through the bracket 8, then close the vacuum valves 1 and 2, open the vent valves 3, 4 and the vent valve 5, and introduce 0.5Mpa Ar gas, so that the tellurium and cadmium liquids are sprayed and atomized from nozzles 5 and 6 respectively. The aperture of the atomized nozzle is 0.5mm. ”-shaped bottom of the C-terminal of the quartz tube. After the atomization is completed...

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Abstract

The invention discloses a high-temperature liquid-phase synthesis method of cadmium telluride powder, which comprises the following steps: respectively containing cadmium blocks and tellurium blocks in the end A and the end B of a Y-shaped tube according to a mol ratio of 1:1; horizontally placing the Y-shaped quartz tube in an open / close type Y-shaped furnace chamber performing three-section heating; then vacuumizing the quartz tube to 1*10<-3>-1*10<-4> Pa; respectively heating the section A, the section B and the section C of the Y-shaped quartz tube to 350-400 DEG C, 480-600 DEG C and 600-1100 DEG C, and keeping the temperature until the test is finished; when the tellurium and the cadmium are molten into liquids, vertically arranging the open / close type furnace performing three-section heating through a bracket 8; then closing vacuum valves 1 and 2, opening breather valves 3 and 4 and a bleed valve 5, and introducing Ar gas of 0.01-1 MPa, so that the tellurium and cadmium liquids are respectively sprayed out from nozzles 6 and 7 and atomized, the high-purity cadmium telluride powder can be synthesized through the contact of the atomized tellurium and cadmium liquid drops, and the cadmium telluride powder scatters on the bottom of the end C of the Y-shaped quartz tube; and after the atomization process is finished, stopping heating, cooling to room temperature, opening an end cover 9 at the end C, and collecting the high-purity cadmium telluride powder.

Description

technical field [0001] The invention relates to a preparation method of cadmium telluride powder, in particular to a preparation method of high temperature liquid phase atomization. Background technique [0002] Cadmium telluride is a compound semiconductor, its band gap is generally 1.45eV, it is an ideal photoelectric conversion material, mainly used to produce cadmium telluride solar cell thin film, and polycrystalline cadmium telluride alloy powder is used to prepare solar cell telluride The key core material of cadmium thin films. At present, cadmium telluride is mainly synthesized by solid powder or particles at high temperature in China. For example, Chinese patent 200710049890.5 discloses a preparation method of high-purity cadmium telluride, which is characterized in that 5N tellurium and 5N cadmium are prepared in a molar ratio of 1:1. Mixing, the mixture is crushed or ground into pellets, the particle size is 8-13um, 500-600 parts by weight, put into a quartz tub...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/04
Inventor 叶金文刘颖何功明苟军军
Owner SICHUAN UNIV
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