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Substrate processing method

A processing method and substrate technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of pausing and waiting, spending too much time, etc.

Inactive Publication Date: 2013-01-16
LIGADP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the problem with this method is that the deposition process takes too much time
[0004] The reason for this problem is that since the required temperature and the required atmosphere are different in the steps of depositing the various layers, each step must be paused and waited during the temperature increase or decrease to the required temperature or during the control of the required atmosphere

Method used

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Embodiment Construction

[0042] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the disclosed embodiments, but can be implemented in various ways. This embodiment is provided to complete the disclosure of the present invention and to enable those of ordinary skill in the art to understand the scope of the present invention. In order to emphasize a clearer description, the shapes of elements and the like in the drawings may be exaggerated. The same reference numerals refer to the same parts throughout the drawings.

[0043] figure 1 is a schematic plan view of a first embodiment of a chemical vapor deposition apparatus for performing a substrate processing method according to the present invention.

[0044] Such as figure 1 As shown, the chemical vapor deposition apparatus according to the first embodiment includes a reaction chamber 1100 , a buffer chamber 1200 , a transport ...

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Abstract

A substrate processing method is required in a process for forming a thin film on a substrate so as to improve the process efficiency and form a high quality thin film. To this end, the substrate processing method according to the present invention comprises: forming an undoped layer including a group-III element and a group-V element on a substrate in the first chamber by a vapor deposition process; carrying the substrate out of the first chamber to a buffer chamber then into the second chamber; and forming an n-type layer including a group-III element and a group-V element on a substrate in the second chamber by a vapor deposition process.

Description

technical field [0001] The present invention relates to a method for processing a substrate, and more particularly, to a method for forming a thin film on a substrate. Background technique [0002] In general, a light emitting diode (LED) has a structure in which an n-type layer, an active layer, and a p-type layer are sequentially stacked. One of the methods of forming the n-type layer, the active layer and the p-type layer is metal organic chemical vapor deposition. The metal-organic chemical vapor deposition method is a method of spraying a metal-organic compound gas toward a heated substrate and causing a chemical reaction on the surface of the heated substrate to form a desired thin film on the surface of the substrate. [0003] For conventional metal organic chemical vapor deposition, all steps for forming n-type layer, active layer and p-type layer are performed in one reaction chamber. However, the problem with this method is that the deposition process takes too m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
CPCH01L21/67207H01L21/67745H01L21/67173H01L21/67754H01L21/67766
Inventor 洪性在韩锡万陈周郑镇烈
Owner LIGADP