switch tube parallel circuit

Abstract

The invention discloses a switch tube parallel circuit. The switch tube parallel circuit comprises a first switch tube and a second switch tube, a drain electrode of the first switch tube is in a parallel connection with a drain electrode of the second switch tube, a source electrode of the first switch tube is in the parallel connection with a source electrode of the second switch tube, a grid electrode of the first switch tube is input into a first driving source, a grid electrode of the second switch tube is input into a second driving source, and the two driving sources are driven by time difference, so that the switch tubes have no time overlap in the state change period of the two switch tubes which are in the parallel connection. The switch tube parallel circuit has the advantages that the circuit is prevented from oscillating, and the switch tubes are protected from being damaged.

Description

technical field [0001] The invention relates to the field of electronic technology, in particular to a switch tube parallel circuit. Background technique [0002] In electronic circuit design, a plurality of field effect transistors or insulated gate bipolar transistors (Insulated Gate Bipolar Transistor, IGBT for short) are usually used in parallel to improve current driving capability. [0003] The common field effect transistor parallel circuit in the prior art is to connect multiple field effect transistor terminals with the same name in parallel. like figure 1 As shown, it is a parallel circuit of three field effect transistors, the gate of field effect transistor T1, the gate of field effect transistor T2 and the gate of field effect transistor T3 are connected in parallel, the drain of field effect transistor T1, the gate of field effect transistor T2 The drain is connected in parallel with the drain of the field effect transistor T3, the source of the field effect ...

AI Technical Summary

Problems solved by technology

[0007] When the above-mentioned feedback transmission steps have many stages, the process is long, and multiple reflections are intertwined with each other, negative feedback is likely to become positive feedback at a certain moment, and as long as any moment becomes positive feedback, oscillation will occur , and the consequences of oscillation often cause damage to the FET

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