Purification method of indium back extraction solution

The technology of stripping liquid and solution is applied in the field of comprehensive recovery of indium, which can solve the problems of large consumption of zinc powder, difficult to remove, reduced indium replacement efficiency and direct yield, etc., and achieves low production cost, favorable recovery and convenient operation. Effect

Active Publication Date: 2013-04-03
ZHUZHOU SMELTER GRP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the prior art, zinc powder or indium sponge is usually used to remove impurities in the indium stripping solution, but because the indium stripping solution contains high acid and high impurity content, it is easy to produce arsine when replacing impurities such as arsenic with zinc powder Highly toxic gas, which seriously deteriorates the on-site operating environment, endangers human health, and also reduces the efficiency and direct yield of indium replacement. The consumption of zinc powder is large and the efficiency of impurity removal is low.
However, it is difficult to remove impurities such as iron and tin in the indium stripping solution by using indium sponge to remove impurities.

Method used

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  • Purification method of indium back extraction solution

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] In this example, the main components of indium stripping solution S1 (both in ionic state) are: In 87.62g / L, Fe 3.40g / L, Bi 1.58g / L, Sn 0.037g / L, As 5.61g / L L, Sb 1.60g / L.

[0045] Step A: Add ferrous chloride to the purification tank equipped with indium stripping solution S1, stir continuously to dissolve it completely, and the amount of ferrous chloride added is the ferrous chloride required for the complete precipitation of arsenic and antimony in S1 1.0 times the theoretical amount.

[0046] Step B: Under stirring, slowly add hydrogen peroxide to the solution system of step A, and react for 0.5h under stirring to obtain an oxidation solution; wherein, the amount of hydrogen peroxide is oxidized Fe 2+ and Sn 2+ 1.1 times the required theoretical amount.

[0047] Step C: Add sodium hydroxide to the oxidizing solution prepared in step B, and carry out neutralization reaction under agitation. The neutralization reaction controls the end point pH=2.0, and keeps the e...

Embodiment 2

[0050] In this example, the main components of indium stripping solution S2 (both in ionic state) are: In 115.83g / L, Fe 6.07g / L, Bi 1.92g / L, Sn 0.042g / L, As 6.18g / L L, Sb 0.96g / L.

[0051] Step A: Add ferrous chloride to the purification tank equipped with indium stripping solution S2, stir continuously to make it completely dissolved, and the amount of ferrous chloride added is the ferrous chloride required for the complete precipitation of arsenic and antimony in S2 1.1 times the theoretical amount.

[0052] Step B: Under stirring, slowly add hydrogen peroxide to the solution system of step A, and react for 0.8h under stirring to obtain an oxidation solution; wherein, the amount of hydrogen peroxide is oxidized Fe 2+ and Sn 2+ 1.3 times the required theoretical amount.

[0053] Step C: Add sodium hydroxide to the oxidized solution prepared in step B, and carry out neutralization reaction under agitation. The neutralization reaction controls the end point pH=2.3, and keeps...

Embodiment 3

[0056] In this example, the main components of indium stripping solution S3 (both in ionic state) are: In 120.18g / L, Fe 4.19g / L, Bi 2.60g / L, Sn 0.051g / L, As 4.95g / L L, Sb 1.18g / L.

[0057] Step A: Add ferrous sulfate to the purification tank equipped with indium stripping liquid S3, stir continuously to make it completely dissolved, the amount of ferrous sulfate added is the theoretical amount of ferrous sulfate required for the complete precipitation of arsenic and antimony in S2 1.2 times.

[0058] Step B: Under stirring, slowly add hydrogen peroxide to the solution system in step A, and react for 1 hour under stirring to obtain an oxidation solution; wherein, the amount of hydrogen peroxide is oxidized Fe 2+ and Sn 2+ 1.5 times the required theoretical amount.

[0059] Step C: Add sodium hydroxide to the oxidizing solution prepared in step B, and carry out neutralization reaction under stirring conditions, and control the end point pH of the neutralization reaction to be...

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Abstract

The invention provides a purification method of indium back extraction solution, comprising the following steps: A, adding soluble ferrite in indium back extraction solution, and stirring for dissolving; B, under the condition of stirring, adding hydrogen peroxide, respectively oxidizing Fe2+ and Sn2+ in the solution into Fe3+ and Sn4+; C, adding sodium hydroxide till the pH value of the system is 2.0-2.5 so as to obtain neutralizer; and D, filtering so as to obtain scavenging solution and purifying residue. According to the purification method of indium back extraction solution provided by the invention, impurities in the indium back extraction solution such as ferrum, arsenium, stibium, bismuth, stannum and the like can be removed, the generation of poisonous gas hydrogen arsenide when indium back extraction solution displacement can be prevented, the consumption of zinc slabs in the displacement process is reduced, and conditions for obtaining high-grade crude indium in the next step are provided, and simultaneously valuable metals such as bismuth, stannum and the like are enriched so as to be beneficial for recycle. Simultaneously, the purification method provided by the invention is simple in technology, convenient to operate and low in production cost.

Description

technical field [0001] The invention relates to a method for comprehensively recovering indium in a zinc hydrometallurgy process, in particular to a method for purifying an indium back-extraction solution. Background technique [0002] Indium has the characteristics of light permeability and strong conductivity, and is mainly used in the production of ITO targets (ITO targets are used in the production of liquid crystal displays and flat panel screens), accounting for 70% of global indium consumption; another 30% of global indium consumption Used in the fields of electronic semiconductors, solders and alloys. The indium used in the above fields requires its purity to be above 99.995%. To obtain refined indium with a purity of 99.995%, the impurity content in the crude indium must first be controlled, that is, high quality sponge indium. [0003] At present, with the increasingly scarce indium resources, the obtained indium recovery raw materials are very miscellaneous, and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22B3/44C22B58/00
CPCY02P10/20
Inventor 林文军朱北平周正华廖贻鹏黄勇周萍刘一宁
Owner ZHUZHOU SMELTER GRP
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