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A kind of low temperature polysilicon thin film transistor and its manufacturing method

A thin film transistor, low temperature polysilicon technology, applied in the field of de

Active Publication Date: 2016-04-06
CHENGDU VISTAR OPTEOLECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when making the entire TFT substrate, limited to the existing process, S-TFT and D-TFT are generally made into thin film transistors with the same performance parameters, so it is not conducive to effectively opening and closing S-TFT and gray scale control

Method used

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  • A kind of low temperature polysilicon thin film transistor and its manufacturing method
  • A kind of low temperature polysilicon thin film transistor and its manufacturing method
  • A kind of low temperature polysilicon thin film transistor and its manufacturing method

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Embodiment Construction

[0032] In order to facilitate a further understanding of the structure, method and achieved effects of the present invention, preferred embodiments are described in detail below in conjunction with the accompanying drawings.

[0033] figure 2 and Figure 4 They are respectively the schematic plan views of the switching TFT and the driving TFT in the present invention, image 3 and Figure 5 They are schematic cross-sectional views of a switching TFT (S-TFT) and a driving TFT (D-TFT) in the present invention, respectively. Such as image 3 As shown, taking a switching TFT as an example, the bottom of the switching TFT is a buffer layer 10, and the buffer layer 10 is provided with a polysilicon 11, and the polysilicon 11 and the buffer layer 10 are covered with a gate insulating layer 12, and the gate insulating layer 12 is provided with a metal gate 13, the gate 13 and the gate insulating layer 12 are coated with a dielectric layer 14, and between the dielectric layer and ...

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Abstract

The invention discloses a low-temperature polycrystalline silicon thin film transistor and a manufacturing method thereof. The low-temperature polycrystalline silicon thin film transistor comprises a switch thin film transistor and a driving thin film transistor, the driving thin film transistor structurally and sequentially comprises a buffer layer, polycrystalline silicon, a gate insulation layer, a gate, a dielectric layer and a passivation layer from bottom to top, a source contact hole and a drain contact hole are formed in the dielectric layer and the insulation layer respectively, a source and a drain are formed on the source contact hole and the drain contact hole respectively, a conduction hole for connecting anode materials for driving organic light-emitting devices to emit light is formed on a drain area of the driving thin film transistor, and a passivation layer hole is formed above the overlapped area of the gate and the polycrystalline silicon. The switch TFT (thin film transistor) and the driving TFT on the same base board have different S factors.

Description

technical field [0001] The present invention relates to an active matrix organic light emitting display (AMOLED, ActiveMatrixOrganicLightEmittingDiode) thin film transistor and its manufacturing method, in particular to a low-temperature polysilicon thin film transistor with different S factors and placing the thin film transistors with different S factors on the same substrate production method. Background technique [0002] Active matrix organic light-emitting display device (AMOLED) is an active light-emitting device. Compared with the current mainstream flat-panel display technology thin-film transistor liquid crystal display (TFT-LCD), AMOLED has the advantages of high contrast, wide viewing angle, low power consumption, and thinner volume. , is expected to become the next-generation flat panel display technology after LCD, and is one of the most concerned technologies in flat panel display technology. [0003] At present, AMOLED mainly uses low-temperature polysilicon...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/05H01L51/10H01L51/40
Inventor 葛泳邱勇黄秀颀刘玉成朱涛
Owner CHENGDU VISTAR OPTEOLECTRONICS CO LTD