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Method for Measuring the Diameter of Czochralski Single Crystal

A diameter measurement, single crystal technology, applied in the direction of single crystal growth, chemical instruments and methods, self-melt pulling method, etc., can solve the problems of noise interference, low calculation accuracy, complicated operation, etc., achieve simple operation, improve calculation The effect of precision

Inactive Publication Date: 2015-10-28
LONGI GREEN ENERGY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for measuring the diameter of a Czochralski single crystal, so as to solve the problems of complicated operation, noise interference and low calculation accuracy existing in the existing diameter measuring method

Method used

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  • Method for Measuring the Diameter of Czochralski Single Crystal
  • Method for Measuring the Diameter of Czochralski Single Crystal
  • Method for Measuring the Diameter of Czochralski Single Crystal

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Embodiment

[0030] Examples, see figure 1 , a method for measuring the diameter of a Czochralski single crystal, comprising the following steps:

[0031] In the first step, a CCD camera with a high resolution of 2 million pixels is used to obtain images of single crystal growth. Specifically, there is a certain angle between the optical axis of the CCD camera and the liquid surface of the melt in the crucible, and the angle is not equal to 90°. refer to figure 2 , in the single crystal growth image acquired during the isometric growth process, there is a bright ring 20 at the solid-liquid interface below the single crystal 10 . The bright ring 20 includes an inner edge 21 close to the single crystal 10 and an outer edge 22 close to the melt side. figure 2 In the figure, due to the influence of the shooting angle and the structure of the single crystal furnace, the bright ring 20 is partially blocked.

[0032] In subsequent steps, the image of the single crystal growth is input to th...

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Abstract

A diameter measurement method for a straight pulling single crystal comprises the steps that a CCD (charge coupled device) camera is used for acquiring a single crystal growing image and the single crystal growing image is processed, and the resolution ratio of the CCD camera is higher than 2 million pixels; and the processing of the single crystal growing image comprises the steps as follows: extracting a crystal outline in a position of a single crystal growing solid liquid interface; fitting the crystal outline to obtain an elliptical boundary; correcting the elliptical boundary into a circular boundary; and obtaining the diameter of the single crystal. The diameter measurement method for the straight pulling single crystal is high in accuracy of a measurement result, can be operated easily, and is free from noise disturbance. The method can be used for single crystal diameter measurement during processes such as seeding, diameter enlarging, diameter conversion and equal diameters.

Description

technical field [0001] The invention belongs to the technical field of single crystal manufacturing and relates to a method for measuring the diameter of a Czochralski single crystal. Background technique [0002] Photovoltaic power generation, as one of the main energy sources for green energy and sustainable development of human beings, has been increasingly valued and developed vigorously by countries all over the world. As one of the basic materials for photovoltaic power generation, monocrystalline silicon wafers have a wide market demand. A common single crystal silicon growth method is the Czochralski method, that is, in a single crystal furnace, the seed crystal is immersed in a melt contained in a crucible, and the seed crystal is pulled while rotating the seed crystal and the crucible, so that the The lower end of the crystal is sequentially seeded, shouldered, turned, equal-diametered, and finished to obtain a single crystal silicon rod. [0003] In order to ens...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/26
Inventor 石磊邢建龙
Owner LONGI GREEN ENERGY TECH CO LTD
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