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Apparatus and method for treating a surface of a substrate

A substrate and action technology, applied to the surface device, to deal with the surface field of the substrate, can solve the problems of complex mechanical structure of the nozzle head, inability to withstand precursors uniformly, and large mechanical force

Active Publication Date: 2015-09-30
青岛四方思锐智能技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of the prior art methods for producing multiple atomic layers is that the back and forth motions generate high mechanical forces which must be withstood by the nozzle tip
The problem with rotating nozzle heads is that the entire surface of the substrate or specific locations are not evenly exposed to the precursor due to the rotating motion
However, when the rotation speed increases, the force on the nozzle head becomes larger, which makes the mechanical structure of the nozzle head more complicated.

Method used

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  • Apparatus and method for treating a surface of a substrate
  • Apparatus and method for treating a surface of a substrate
  • Apparatus and method for treating a surface of a substrate

Examples

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Embodiment Construction

[0014] figure 1 A schematic diagram of one embodiment of an apparatus is shown for subjecting a surface 4 of a substrate 6 to successive surface reactions of at least a first precursor and a second precursor according to the principles of ALD. The apparatus comprises a nozzle head 2 having: one or more first precursor nozzles for subjecting a surface 4 of a substrate 6 to a first precursor; and one or more nozzles for subjecting the surface 4 of a substrate 6 to A second precursor nozzle subjected to a second precursor. The nozzle head 2 can also be provided with a plurality of purge gas nozzles and possibly a plurality of discharge nozzles, which are arranged between the respective precursor nozzles. However, it should be noted that by providing the precursor nozzle and the purge gas nozzle with discharge ports for discharging the precursor and purge gas, the discharge nozzle can be omitted. In one embodiment, the nozzle head 2 sequentially includes precursor nozzles, purge...

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Abstract

The present invention relates to an apparatus for processing a surface (4) of a substrate (6). The apparatus comprises a nozzle head (2) for subjecting the surface (4) of the substrate (6) to successive surface reactions of at least a first precursor (A) and a second precursor (B). The nozzle head (2) comprises one or more first precursor nozzles (8) for subjecting the surface (4) of the substrate (6) to the first precursor (A), one or more second precursor nozzles (10) for subjecting the surface (4) of the substrate (6) to the second precursor (B), and one or more purge gas zones (12) between the first and second precursor nozzles (8, 10). According to the invention the nozzle head (2) is arranged to be moved along a loop over the surface (4) of the substrate (6) such that the orientation of the first and second precursor nozzles (8, 10) is maintained substantially constant.

Description

technical field [0001] The invention relates to a device comprising a nozzle head for subjecting the surface of a substrate to successive surface reactions of at least a first precursor and a second precursor, in particular to a device according to the preamble of claim 1 . The invention also relates to a device for treating the surface of a substrate, said device subjecting the surface of the substrate to successive surface reactions of at least a first precursor and a second precursor, in particular to a preamble according to claim 13 part of the device described. The invention also relates to a method for treating the surface of a substrate according to the preamble of claim 25 . Background technique [0002] In various types of devices of the prior art, nozzle heads are used to subject the surface of a substrate to successive surface reactions of at least a first precursor and a second precursor, according to the principles of the atomic layer deposition method (ALD). ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/455
CPCC23C16/45551C23C16/45574C23C16/45589C23C16/545
Inventor P·索伊尼宁T·阿拉萨雷拉
Owner 青岛四方思锐智能技术有限公司
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