Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A Plasma Immersion Implantation Electrode Structure

A technology of injecting electrodes and immersion injection, which is applied in the direction of circuits, discharge tubes, electrical components, etc., can solve problems such as injection pollution, achieve the effects of reducing edge effects, reducing sputtering pollution, and increasing injection uniformity

Inactive Publication Date: 2016-02-03
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Another problem with plasma immersion implantation is that the edge of the implanted electrode is directly exposed to the plasma. During implantation, ions will bombard the exposed electrode and cause implantation contamination. Therefore, an optimized implanted electrode structure design is very important.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A Plasma Immersion Implantation Electrode Structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] The technical solution of the present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0018] like figure 1 As shown, this embodiment provides a plasma-immersion injection electrode structure, which includes an injection electrode 103, an insulating layer 104, and a shielding layer 105 from the inside to the outside. The injection electrode 103 is connected to a bias power supply that provides a bias voltage, and the injection The electrode 103 is made of aluminum to reduce sputtering pollution during implantation. The insulating layer 104 is used for isolation and insulation of the injection electrode and the shielding layer. The shielding layer 105 is located at the outermost layer of the entire electrode structure and is made of aluminum. The shielding layer 105 is grounded and used for shielding the injection electrode 103 during injection to reduce sputtering pollution during injection.

[0019]...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of plasma immersion injection, in particular to a plasma immersion injection electrode structure. The plasma immersion injection electrode structure sequentially comprises an injection electrode, an insulating layer and a shielding layer from inside to outside. The injection electrode is connected with a bias power supply which supplies bias voltage. The insulating layer is used for isolating and insulating the injection electrode and the shielding layer which is grounded. The plasma immersion injection electrode structure has the advantages of evidently reducing fringe effect in the process of injecting, and thus increasing injection uniformity, and meanwhile reducing sputtering pollution in the process of injecting.

Description

technical field [0001] The invention relates to the technical field of plasma immersion injection, in particular to a plasma immersion injection electrode structure. Background technique [0002] Plasma immersion implantation (plasmaimmersionionimplantation, PIII) is a technology that immerses the substrate directly in the plasma. Under the action of the implantation bias voltage, the ions are accelerated and implanted into the substrate. PIII is widely used in the surface modification of materials. and semiconductor fields, such as the preparation of ultra-shallow junctions and SOI structures in the semiconductor field. [0003] Plasma immersion implantation has many advantages: such as relatively simple equipment and low implantation cost; plasma immersion implantation is non-scanning doping, which can realize simultaneous implantation of large-area substrates with high implantation efficiency; it can realize doping of workpieces with three-dimensional complex structures. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32H01J37/04
Inventor 刘杰屈芙蓉李超波夏洋
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com