Unlock instant, AI-driven research and patent intelligence for your innovation.

Light-emitting chip and method for manufacturing light-emitting chip

A technology of light-emitting chips and manufacturing methods, which can be applied to electrical components, circuits, semiconductor devices, etc., and can solve problems such as poor heat dissipation

Active Publication Date: 2015-11-04
IND TECH RES INST
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Another object of the present invention is to provide a light-emitting chip, which can effectively improve the existing problem of poor heat dissipation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Light-emitting chip and method for manufacturing light-emitting chip
  • Light-emitting chip and method for manufacturing light-emitting chip
  • Light-emitting chip and method for manufacturing light-emitting chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] Figure 1A to Figure 1M It is a schematic cross-sectional flow chart of the method for manufacturing a light-emitting chip according to the first embodiment of the present invention. Please refer first Figure 1A In the manufacturing method of this embodiment, an epitaxial substrate 10 may be provided first, and an epitaxial stack layer 110 has already been formed on the epitaxial substrate 10. In this embodiment, the epitaxial stacked layer 110 includes a first semiconductor layer 112, a light emitting layer 114, and a second semiconductor layer 116 stacked in sequence. In this embodiment, the epitaxial stacked layer 110 is fabricated on the epitaxial substrate 10 through an epitaxial fabrication process, for example. The epitaxy process includes hydride vapor phase epitaxy (HVPE), molecular beam epitaxy (MBE), or metal-organic vapor-phase epitaxy (MOVPE) Wait. In addition, the epitaxial stack layer 110 may include one or more epitaxial semiconductor structures 110S to...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a light-emitting chip and a manufacturing method of the light-emitting chip. The light-emitting chip includes an externally extending semiconductor structure, a heat conductive layer, a first electrode, and a second electrode. The externally extending semiconductor structure is provided with a first surface, a second surface opposite to the first surface, and a side surface. The heat conductive layer is arranged at the side of the first surface of the externally extending semiconductor structure, wherein the heat conductive coefficient of the heat conductive layer is greater than 200W / mk. The firs electrode is arranged one side, far away from the externally extending semiconductor structure, of the heat conductive layer. The second electrode is arranged at the second surface of the externally extending semiconductor structure to be opposite to the first electrode.

Description

Technical field [0001] The invention relates to a light-emitting chip and a manufacturing method thereof, and in particular to a light-emitting chip with good heat dissipation effect and thin thickness and a manufacturing method thereof. Background technique [0002] Light Emitting Diode (LED, Light Emitting Diode) is mainly a light-emitting element constructed by using III-V or II-IV group compound semiconductor materials and component structure changes. Because light-emitting diodes have the characteristics of small size, long life, low driving voltage, fast response speed and good shock resistance, they are widely used in electronic products such as portable communication devices, traffic signs, outdoor display boards, automotive light sources and lighting. field. [0003] With the advancement of manufacturing technology, light-emitting diodes have gradually enhanced their luminous efficiency through continuous research and development and improvement, so that their luminous br...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/64H01L33/00
Inventor 翁瑞坪胡鸿烈许镇鹏蔡曜骏
Owner IND TECH RES INST