Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Memory test method

A memory testing and memory technology, applied in static memory, instruments, etc., can solve the problems of heavy workload of programmers, limited depth of pin graphics, limitations, etc., and achieve the effect of reducing programming time, improving efficiency, and reducing the amount of graphics programming

Inactive Publication Date: 2013-07-03
AVIC NO 631 RES INST
View PDF3 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

ATE for memory testing uses address generators to automatically generate address data, and the size of memory suitable for testing is limited by address generators
At present, for devices with a larger capacity than the number of addresses in the address generator, if the full address is to be traversed, the method of handwriting address graphics is often used. The workload of programmers is heavy, and the depth of pin graphics is limited (mostly between 128K and 16M) ), to complete the writing of the whole block, it needs to be divided into multiple graphics

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] The present invention provides a kind of memory test method, and this method comprises the following steps:

[0013] 1) write data in all storage units of the memory to be tested;

[0014] 2) read the data recorded in all storage units in the memory to be tested;

[0015] 3) Judge the relationship between the number of bits of the address line of the memory to be tested and the number of bits of the address generator ATE address line; if the number of bits of the address line of the memory to be tested is lower than or equal to the number of bits of the address generator ATE address line , then directly carry out step 4); if the number of bits of the address line of the memory to be tested is higher than the number of bits of the address generator ATE address line, then carry out step 5)

[0016] 4) whether the data read in step 2) is the same as the data written in step 1) by address generator ATE to judge whether all storage units of the memory to be tested are worki...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a memory test method, which includes: 1) writing data; 2) reading data; 3) if the address line digit of a to-be-tested memory is lower than or equal to the address line digit of an address generator ATE, making use of the address generator ATE to see whether the read data and written data are the same so as to judge whether all memory cells of the to-be-tested memory work normally; if the address line digit of the to-be-tested memory is higher than the address line digit of the address generator ATE, dividing the address line digit of the to-be-tested memory into low digit address lines and high digit address lines; according to the increase of fixed addresses, partitioning all the memory cells of the tested memory into blocks, increasing the fixed addresses from all 0 to all 1, and dividing a memory cell along with every 1 increase; and connecting the low digit address lines to the address generator ATE, which can automatically generate address data. The method provided in the invention has the advantages of effective use of ATE resources, reduction of test pattern compilation time and improvement of programming efficiency.

Description

technical field [0001] The invention belongs to the field of computer testing, and relates to a testing method, in particular to a memory testing method. Background technique [0002] With the rapid development of microelectronics technology and the trend of miniaturization and integration of electronic equipment, the production and application of large-capacity memories are more extensive, which brings higher requirements for the testing of this type of devices. ATE for memory testing uses address generators to automatically generate address data, and the size of memory suitable for testing is limited by address generators. At present, for devices with a larger capacity than the number of addresses in the address generator, if the full address is to be traversed, the method of handwriting address graphics is often used. The workload of programmers is heavy, and the depth of pin graphics is limited (mostly between 128K and 16M) ), to complete the writing of the whole block ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G11C29/18
Inventor 刘文媛罗弘
Owner AVIC NO 631 RES INST
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products