A Combined Rapid Deposition Process of Spectrally Selective Absorbing Films
An absorption film layer and deposition process technology, applied in the field of solar thermal utilization, can solve the problems such as the inability to achieve the selective absorption of the solar spectrum, the inability to accurately control the composition ratio of airflow reactive sputtering, and the difficulty in controlling the ratio.
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Embodiment 1
[0031] Example 1, a combined spectrally selective absorption film layer rapid deposition process, the combined spectrally selective absorption film layer is composed of an infrared reflective layer, an absorbing layer and an anti-reflection layer sequentially stacked from the inside to the outside; the deposition process uses The magnetron sputtering method is used to obtain the infrared reflection layer and the absorption layer respectively, and the anti-reflection layer is obtained by the hollow cathode gas flow sputtering method;
[0032] The infrared reflective layer adopts one of Ag, Ni, Cu and Al as a raw material, or two or more alloys of Ag, Ni, Cu and Al as a raw material;
[0033] The absorbing layer is composed of 2-4 sub-layers whose metal filling factors are changed sequentially, and each sub-layer adopts magnetron sputtering method to prepare metal filling element M+M oxide or M+M oxynitride to form a mixture ceramic dielectric film , wherein the metal filling fa...
Embodiment 2
[0035] Example 2, in the process described in Example 1: the oxide or oxynitride is Fe-O, Fe-ON, Cr-O, Cr-ON, Ni-O, Ni-ON, Ti-O , Ti-ON, Mn-O, Mn-ON, Sn-O, Sn-ON, Zn-O, ZnON, Mg-O, Mg-ON, Si-O, Si-ON, V-O, V-ON, Mo -O, Mo-ON, W-O, W-ON, Re-O, Re-ON, FeCr-O, FeCr-ON.
Embodiment 3
[0036] Embodiment 3, in the process described in embodiment 1 or 2: hollow cathode gas flow sputtering method deposits Al 2 o 3 In the anti-reflection layer, the vacuum degree is controlled at 100~10 -1 Pa, the sputtering power density is maintained at 0.5-100W / cm 2 , the flow rate of argon is 1000-10000 sccm, and the flow rate of oxygen is 10-200 sccm.
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