Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Rapid deposition process for combined-type spectrally selective absorption film layer

A technology of absorbing film layer and deposition process, which is applied in the field of solar thermal utilization, can solve the problems that the selective absorption of solar spectrum cannot be achieved, the proportion of components cannot be accurately controlled by air flow reactive sputtering, and the proportion is not easy to control.

Active Publication Date: 2013-07-24
RICHU DONGFANG SOLAR ENERGY
View PDF8 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0016] But also due to its fast deposition rate, it is not easy to control the ratio of various components in it.
As for the absorption layer of the spectrally selective absorption film layer, it is composed of a specific metal content metal compound + metal mixed film. Therefore, the use of reactive sputtering cannot accurately control its composition ratio, and thus cannot achieve selective absorption of the solar spectrum. effect

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Example 1, a combined spectrally selective absorption film layer rapid deposition process, the combined spectrally selective absorption film layer is composed of an infrared reflective layer, an absorbing layer and an anti-reflection layer sequentially stacked from the inside to the outside; the deposition process uses The magnetron sputtering method is used to obtain the infrared reflection layer and the absorption layer respectively, and the anti-reflection layer is obtained by the hollow cathode gas flow sputtering method;

[0032] The infrared reflective layer adopts one of Ag, Ni, Cu and Al as a raw material, or two or more alloys of Ag, Ni, Cu and Al as a raw material;

[0033] The absorbing layer is composed of 2-4 sub-layers whose metal filling factors are changed sequentially, and each sub-layer adopts magnetron sputtering method to prepare metal filling element M+M oxide or M+M oxynitride to form a mixture ceramic dielectric film , wherein the metal filling fa...

Embodiment 2

[0035] Example 2, in the process described in Example 1: the oxide or oxynitride is Fe-O, Fe-ON, Cr-O, Cr-ON, Ni-O, Ni-ON, Ti-O , Ti-ON, Mn-O, Mn-ON, Sn-O, Sn-ON, Zn-O, ZnON, Mg-O, Mg-ON, Si-O, Si-ON, V-O, V-ON, Mo -O, Mo-ON, W-O, W-ON, Re-O, Re-ON, FeCr-O, FeCr-ON.

Embodiment 3

[0036] Embodiment 3, in the process described in embodiment 1 or 2: hollow cathode gas flow sputtering method deposits Al 2 o 3 In the anti-reflection layer, the vacuum degree is controlled at 100~10 -1 Pa, the sputtering power density is maintained at 0.5-100W / cm 2 , the flow rate of argon is 1000-10000 sccm, and the flow rate of oxygen is 10-200 sccm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a rapid deposition process for a combined-type spectrally selective absorption film layer. The combined-type spectrally selective absorption film layer is composed of an infrared reflection layer, an absorption layer and an anti-reflection layer from inside to outside in a sequential superposing manner, wherein the infrared reflection layer and the absorption layer are obtained by adopting a magnetron sputtering method, and the anti-reflection layer is obtained by adopting a hollow cathode airflow sputtering method. With the adoption of the process disclosed by the invention, the high purity of the infrared reflection layer and the absorption layer prepared by the magnetron sputtering method is adequately utilized, and the advantage of accurately controlling the content of metals in the film layer and the thickness of the film layer, of the magnetron sputtering method can be accurately exerted, thus obtaining the solar spectrally selective absorption film layer with a high absorption ratio and a low emission ratio; and the metal compound prepared by virtue of airflow reaction sputtering has the advantages of being high in purity, compact, and high in deposition speed, thus improving the oxidation resistance, corrosion resistance and high-temperature resistance of the whole spectrally selective absorption film layer. The process disclosed by the invention has the advantages of being high in deposition efficiency, high in deposition speed, firm in the combination of the film layer, and greatly improved in the performance of the film layer.

Description

technical field [0001] The invention relates to a method for preparing a heat absorbing body material of a vacuum or non-vacuum heat collecting device, in particular to a combined rapid deposition process of a spectrally selective absorbing film layer, which belongs to the field of solar thermal utilization. Background technique [0002] At present, China's photothermal industry is developing rapidly, especially its core solar energy vacuum heat collector has reached an annual output of over 100 million pieces, and the annual new heat collection area has reached more than 10 million square meters. For the solar spectrum selective absorption coating At present, anodic oxidation, electroplating black chromium or even polymer-based spray coatings are mainly used in China. This type of coating is prepared by a wet process, and its preparation process will more or less produce waste liquid and other environmental pollution problems, and its The prepared light-to-heat conversion f...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08C23C14/06C23C14/14F24J2/48
CPCY02E10/40
Inventor 焦青太尧克光王国伟
Owner RICHU DONGFANG SOLAR ENERGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com