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mems oscillator

A technology of oscillators and resonators, which is applied in the field of MEMS oscillators, can solve the problems that cannot meet the practical application requirements of oscillators, and it is difficult to achieve high stable frequency output.

Active Publication Date: 2016-05-11
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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AI Technical Summary

Problems solved by technology

For example, silicon-based MEMS resonators have a temperature stability of -20ppm / °C [1], which is far from meeting the actual application requirements of oscillators.
At present, researchers have optimized the frequency stability of MEMS resonators mainly from materials [2], device structure [3] and peripheral circuits [4], but it is difficult to achieve high stable frequency output. In the temperature range of -100℃, the frequency stability is about ±20ppm

Method used

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Embodiment Construction

[0026] see figure 1 and figure 2 As shown, the present invention provides a MEMS oscillator, comprising:

[0027] A MEMS resonator 3, described MEMS resonator 3 is the MEMS resonator of the high-frequency high-quality factor Q value of band temperature compensation, and this MEMS resonator 3 comprises heating resistance 2 and resonant unit 1 (referring to figure 2 ), the MEMS resonator 3 is a MEMS disk resonator, and the MEMS resonator 3 of the disk structure includes a solid disk structure or a hollow disk structure with a central column, and the MEMS resonator 3 is an electrostatic drive / electrostatic Detection, or piezoelectric drive / piezoresistive detection, the gap between the MEMS resonator 3 and the electrode based on the electrostatic principle is air or a solid medium (such as silicon oxide, silicon nitride, hafnium oxide); the structure of the MEMS resonator 3 The layer is a highly doped semiconductor material or piezoelectric material (such as polysilicon, alumi...

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Abstract

The invention relates to an MEMS (Micro-electromechanical Systems) oscillator which comprises an MEMS resonator, a first impedance matching network, a second impedance matching network, an amplifier, a phase-shift network and an output buffer, wherein the input end of the MEMS resonator is connected with the output end of the MEMS resonator; the output end of the second impedance matching network is connected with the input end of the MEMS resonator; the input end of the amplifier is connected with the output end of the first impedance matching network; the input end of the phase-shift network is connected with the output end of the amplifier, and the output end of the phase-shift network is connected with the input end of the second impedance matching network; and the input end of the output buffer is connected with the output end of the phase-shift network, therefore a positive feedback oscillating circuit is formed. The MEMS resonator in the MEMS oscillator is an MEMS disc resonator of a high frequency high quality factor (Q) with temperature compensation, and has highly stable frequency output.

Description

technical field [0001] The technical field of the present invention relates to oscillators, in particular to MEMS oscillators based on MEMS resonators. Background technique [0002] Clocks and oscillators are the heart of all electronic systems. At present, the clocks of most high-performance electronic systems are provided by quartz oscillators, but quartz crystal oscillators are off-chip components, which are not easy to integrate into ICs, which not only increases the integration cost , and hinders the miniaturization of the system. [0003] MEMS resonators make mechanical structures vibrate at their natural frequency. Micro-nano resonators are integrated with IC circuits to form MEMS oscillators. The frequency of the MEMS resonator determines the frequency of the oscillator. Oscillators based on MEMS resonators not only have high frequency and high Q, but also their manufacturing process is compatible with IC technology, which can realize the same chip integration of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03B5/04
Inventor 赵晖杨晋玲骆伟杨富华
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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