Scion root liquid of hackberry and hackberry grafting and seeding method

A technology of grafting seedling raising and rooting liquid, which is applied in the fields of hackberry grafting seedling raising and hackberry scion rooting liquid, can solve the problems of low survival rate of hackberry, and achieve the effects of easy popularization, reasonable formula and simple operation

Active Publication Date: 2013-10-09
句容市乡土树种研究所有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] But at present when the hackberry is grafted, the scion is wrapped with a wet cloth, and the result of doing like this is that the survival rate of the hackberry after the grafting is low

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Embodiment 1: a kind of hackberry scion rooting liquid, comprises the component of following parts by weight in every liter described rooting liquid: 2 parts of 6-benzylaminoadenine, 2 parts of No. ABT2 rooting powders, 18 parts of indole acetic acid, naphthalene 22 parts of acetic acid, 0.3 parts of potassium iodide, 3 parts of zinc sulfate, 0.07 parts of sodium molybdate, 15 parts of ammonium nitrate, 2 parts of magnesium sulfate, and 1.2 parts of vitamin D. The above-mentioned components were dissolved with distilled water, and then placed in a 1-liter volumetric flask to constant volume to obtain the rooting solution.

[0020] Utilize above-mentioned rooting liquid to carry out the method for hackberry grafting seedling raising, this method comprises the steps:

[0021] (1) Selection of scion: first collect the branches of Hackberry tree crown, cut the branches into 5cm long branches with 2 to 3 buds as scion; When the internal cutting reaches the xylem, it is cut ...

Embodiment 2

[0027] Embodiment 2: basically the same as Example 1, the difference is the formula of rooting liquid, 1 part of 6-benzylaminoadenine, 2 parts of No. ABT2 rooting powder, 15 parts of indole acetic acid, 20 parts of naphthalene acetic acid, 0.2 part of potassium iodide , 2 parts of zinc sulfate, 0.05 parts of sodium molybdate, 10 parts of ammonium nitrate, 1 part of magnesium sulfate, and 1 part of vitamin D.

[0028] After adopting above-mentioned rooting liquid, the survival rate of Hackberry is 92%.

Embodiment 3

[0029] Embodiment 3: basically the same as Example 1, the difference is the formula of rooting liquid, 3 parts of 6-benzylaminoadenine, 3 parts of No. ABT2 rooting powder, 20 parts of indole acetic acid, 30 parts of naphthalene acetic acid, 0.5 part of potassium iodide , 4 parts of zinc sulfate, 0.1 parts of sodium molybdate, 20 parts of ammonium nitrate, 3 parts of magnesium sulfate, and 1.5 parts of vitamin D.

[0030] After adopting above-mentioned rooting liquid, the survival rate of Hackberry is 93%.

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PUM

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Abstract

The invention discloses scion root liquid of hackberry. Each liter of root liquid contains the following components in parts by weight: 1-3 parts of 6-benzyl amino adenine, 2-3 parts of ABT2 rooting powder, 15-20 parts of heteroauxin, 20-30 parts of naphthylacetic acid, 0.2-0.5 part of potassium iodide, 2-4 parts of zinc sulfate, 0.05-0.1 part of sodium molybdate, 10-20 parts of ammonium nitrate, 1-3 parts of magnesium sulfate, and 1-1.5 parts of vitamin D. A method for grafting and seeding the hackberry by the root liquid comprises the steps of: selecting scions and preparing the scions; selecting a stock and cutting the selected stock; connecting; and finally, carrying out seeding management. The root liquid disclosed by the invention is reasonable in formula, and the survival ratio of the grafted hackberry can be improved to over 90%. The grafting method disclosed by the invention is simple and convenient to operate, and easy to popularize.

Description

technical field [0001] The invention relates to the field of hackberry planting, in particular to a hackberry scion rooting solution and a method for grafting and cultivating hackberry seedlings using the rooting solution. Background technique [0002] Hackberry ( Celtis sinensis ) is a common tree species of Ulmaceae (Ulmaceae), and it is also endemic to my country, mainly distributed in Anhui, Jiangsu, Fujian, Henan, Sichuan and Taiwan. The Hackberry tree is tall and majestic, with a wide crown, beautiful tree shape, and rich shade. It can show a simple and unsophisticated tree appearance when it grows up. It is an excellent shade tree, street tree, and scenery tree with great potential in garden construction. Hackberry is light-loving, drought-tolerant, not strict on soil, and has strong ecological adaptability. In addition, hackberry also has strong resistance to toxic gases such as sulfur dioxide and chlorine. The bark of hackberry can be used to make paper and a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C05G3/00A01G1/06A01N43/90A01P21/00
Inventor 陆祥林张为强何旭东顾晓峰
Owner 句容市乡土树种研究所有限公司
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