Unlock instant, AI-driven research and patent intelligence for your innovation.

Masking platform horizontal measuring device and method

A technology of measuring device and mask stage, applied in the field of lithography scanning, can solve the problem of increasing the measuring mirror, etc., and achieve the effects of simple optical path, reduced driving quality, and low cost

Inactive Publication Date: 2013-10-30
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
View PDF5 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The object of the present invention is to provide a scanning mask stage horizontal measurement device and method to solve the problem that the measuring mirror increases continuously with the increase of stroke in the existing mask stage measurement device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Masking platform horizontal measuring device and method
  • Masking platform horizontal measuring device and method
  • Masking platform horizontal measuring device and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Please refer to Figure 4, the mask table horizontal direction measuring device provided by the present invention includes an X-direction interferometer system and a Y-direction interferometer system, and a mask is arranged on the plate holder 205 of the mask table and moves along the Y-direction (in the figure The arrow shown in 208 is the scanning direction of the mask table), fine-tuning movement along the X direction, the X-direction interferometer system includes an X-direction interferometer 201a, a folding mirror and an X-direction measuring mirror 203, specifically, the folding The reflector adopts a 45° reflector 202a, and the 45° reflector 202a is arranged on the plate holder 205, and the X-direction measuring mirror 203 is arranged outside the mask stage along the scanning direction, and is located on the mask stage On one side of the fine-tuning direction, the X-direction interferometer 201a is arranged outside the mask table and on one side of the mask tabl...

Embodiment 2

[0038] Preferably, if Figure 6 and Figure 7 As shown, the difference between this embodiment and Embodiment 1 is that: the two sets of refracting mirrors use three-way right-angle measuring mirrors 402a and 402b.

[0039] Please refer to Figure 6 , the mask table horizontal direction measuring device provided by the present invention includes an X-direction interferometer system and a Y-direction interferometer system, and a mask is arranged on the plate holder 405 of the mask table and moves along the Y-direction (in the figure The arrow shown in 408 is the scanning direction of the mask table), and the fine-tuning movement along the X direction. The X-direction interferometer system includes an X-direction interferometer 401a, a deflection mirror and an X-direction measuring mirror 403. Specifically, the deflection The reflection mirror adopts a three-way right-angle measuring mirror 402a, and the three-way right-angle measuring mirror 402a is arranged on the plate hold...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the field of photoetching scanning, and in particular relates to a masking platform horizontal measuring device and method. The masking platform horizontal measuring device comprises an X-direction interferometer system and a Y-direction interferometer system, wherein a mask of a masking platform is provided with a mask which moves in a scanning way along the Y direction and moves in a fine tuning way along the X direction, the X-direction interferometer system comprises an X-direction interferometer, a deflecting reflector and an X-direction measurement mirror, the deflecting reflector is arranged on the mask, the X-direction measurement mirror is arranged outside the masking platform along the scanning direction, and positioned on one side of the masking platform along the fine tuning direction, the X-direction interferometer is arranged outside the masking platform, and positioned on one side of the masking platform along the scanning direction, an emergent light path of the X-direction interferometer is reflected to the X-direction measurement mirror through the deflecting reflector, and returns along the original path, so as to obtain position information of the mask along the X direction. With the adoption of the masking platform horizontal measuring device and method, the problem that the size of the X-direction measurement mirror fixed on the masking platform is continuously increased along with increment of the stroke of the masking platform is solved, and in addition, an optical path is simple, and the cost is low.

Description

technical field [0001] The invention relates to the field of photolithography scanning, in particular to a device and method for measuring the horizontal direction of a mask table. Background technique [0002] The photolithography apparatus in the prior art is mainly used in the field of integrated circuit IC or flat panel display and the manufacture of other micro devices. With a photolithographic apparatus, multilayer masks with different mask patterns are sequentially imaged in precise alignment on a photoresist-coated wafer, such as a semiconductor wafer or an LCD panel. Lithography devices are generally divided into two categories, one is a stepping lithography device, the mask pattern is exposed and imaged on one exposure area of ​​the wafer, and then the wafer moves relative to the mask to move the next exposure area to the mask pattern And under the projection objective lens, the mask pattern is exposed on another exposure area of ​​the wafer again, and this proces...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/20G01B11/00
Inventor 江旭初
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD