A kind of organosilicon material and preparation method thereof for power type LED encapsulation

A technology of LED encapsulation and organic silicon, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low product hardness, affecting service life, low refractive index, etc., achieve high refractive index, improve light transmittance and hardness, The effect of uniform distribution of phenyl groups

Active Publication Date: 2015-10-28
矽时代材料科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] (3) During the use of LEDs, light and heat often cause the aging of packaging materials, which seriously affects the service life of LEDs. Therefore, packaging materials must have good heat resistance and light aging behavior
But this patent can only produce elastic material products, no resin hard products, and the products made according to the above ratio have low hardness and low refractive index

Method used

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  • A kind of organosilicon material and preparation method thereof for power type LED encapsulation
  • A kind of organosilicon material and preparation method thereof for power type LED encapsulation
  • A kind of organosilicon material and preparation method thereof for power type LED encapsulation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] S1. (Low hardness) The synthesis steps for the preparation of silicon polymers containing vinyl and titanium elements are as follows:

[0052] S11. Add 17.7 grams of trimethylchlorosilane, 20 grams of vinyldimethylethoxysilane, 57 grams of methyltriethoxysilane, 152.3 grams of phenyltrichlorosilane, and 124.8 grams of ethyl acetate, 92.5 grams of bis-triethanolamine diisopropyl titanate, 100 grams of butanol, 1000 grams of xylene and 1 gram of aluminum triisopropoxide, stirred evenly;

[0053] S12. Add 700 grams of distilled water dropwise when the temperature is 30°C, control the temperature during the dropping process to not exceed 70°C, and control the dropping time within 2 hours;

[0054] S13. After adding dropwise and reacting at 80°C for 2 hours, add 20 grams of vinyldimethylethoxysilane, 28.2 grams of methylvinyldichlorosilane, 109.2 grams of methylphenyldiethoxysilane, diphenyl 131.6 grams of base dichlorosilane, the dropping time is controlled within 1 hour; ...

Embodiment 2

[0067] S1. The synthesis steps for the preparation of (high hardness) silicon polymer containing vinyl and titanium elements are as follows:

[0068] S11. Add 17.7 grams of trimethylmonochlorosilane, 22 grams of vinyldimethylethoxysilane, 71.2 grams of methyltriethoxysilane, 38 grams of vinyltriethoxysilane, 143.8 grams of phenyltrichlorosilane, 166.4 grams of ethyl orthosilicate, 116.6 grams of diisopropyl bis(acetylacetonate) titanate, 100 grams of isopropanol, 1200 grams of xylene and 0.7 grams of aluminum triisopropoxide , stir evenly;

[0069] S12. Add 850 grams of distilled water dropwise when the temperature is 30°C. During the dropping process, control the temperature not to exceed 70°C, and control the dropping time within 2 hours;

[0070] S13. After adding dropwise and reacting at 80°C for 2 hours, add 32 grams of vinyldimethylethoxysilane, 28.2 grams of methylvinyldichlorosilane, and 84 grams of methylphenyldiethoxysilane. Adding time within 1 hour;

[0071] S14...

Embodiment 3

[0083] S1. The synthetic steps of the phenyl vinyl elastomer polymer containing titanium element are as follows:

[0084] S11. Add 84.6 grams of methylvinyldichlorosilane, 252 grams of methylphenyldiethoxysilane, 273.2 grams of diphenyldichlorosilane, 84.6 grams of phenyltrichlorosilane, and two ( 116.6 grams of diisopropyl titanate, 800 grams of xylene and 1 gram of zinc benzoate, stirred evenly;

[0085]S12. When the temperature is 30°C, add 800 grams of distilled water dropwise. During the dropping process, the temperature should not exceed 70°C, and the dropping time should be controlled within 2 hours;

[0086] S13. Slowly heat up to 90°C for reaction, react for 3 hours, add 52 grams of vinyldimethylethoxysilane dropwise, add dropwise for 1 hour, and react for another 6 hours;

[0087] S14. Extraction and layering, take the resin and solvent part, add 1 g of zinc benzoate, and react at 80 ° C for another 6 hours;

[0088] S15. After the reaction is finished, decolorize,...

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Abstract

The invention discloses an organic silicon material for packaging a power type LED (Light-Emitting Diode). The organic silicon material is prepared from the following components: a silicon polymer containing vinyl and a titanium element, a silicon polymer containing a silicon-hydrogen bond and a titanium element, a solidification catalyst and an inhibitor. In addition, the invention provides a preparation method of the organic silicon material for packaging the power type LED and discloses a specific preparation process of the silicon polymer containing the vinyl and the titanium element and the silicon polymer containing the silicon-hydrogen bond and the titanium element. The organic silicon material disclosed by the invention has the characteristics of higher refractive index (the refractive index achieves 1.53-1.65), high transparency, excellent ultraviolet aging and thermal aging resistant capacities and the like and is an ideal packaging material of the power type LED.

Description

technical field [0001] The present invention relates to organosilicon materials, more specifically, to an organosilicon material for packaging power LEDs and a preparation method thereof. Background technique [0002] In recent years, LED technology and market at home and abroad have developed rapidly. Among them, the luminous efficiency of LED has increased by 100 times, and the cost has dropped by 10 times. The development prospects of backlight, automobile combination taillights and interior lighting, etc., have attracted global lighting manufacturers to join in LED light source and market development. Therefore, LED is known as a new light source in the 21st century, and is expected to become the fourth-generation light source after incandescent lamps, fluorescent lamps, and high-intensity gas discharge lamps. [0003] Semiconductor LEDs are used as lighting sources, and the luminous flux of conventional products is far from that of general-purpose light sources such as...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): C08L83/05C08L83/07H01L33/56
Inventor易太生李伟瑞董睿智丁钦松·柯
Owner矽时代材料科技股份有限公司