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A Dummy Synthesis Method Based on Density Gradient Hotspot Clustering and Local Solving

A comprehensive method and density gradient technology, applied in special data processing applications, instruments, electrical digital data processing, etc., can solve problems such as high computational complexity, dummy element insertion, loss of physical connotation, etc., and achieve density and gradient constraints Precise control, reduced number of dummy insertions, and improved computational efficiency

Active Publication Date: 2017-05-31
FUDAN UNIV
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Problems solved by technology

This method imposes gradient constraints on the grid, which greatly simplifies the dummy filling problem, but partially loses the physical connotation
And from the effect point of view, this method leads to too many dummy insertions due to the lack of control over the number of dummy insertions
In addition, the literature [16] proposes a dummy synthesis method similar to the gradient constraint, which is similar to the Lipchitz-like constraint, but this method also does not consider the limitation of the number of dummy insertions, and still uses the traditional linear programming method. solution, so the computational complexity is high
[0007] Furthermore, in the existing dummy synthesis algorithms, it is generally assumed that the density and density gradient hotspots (that is, the regions that violate the gradient constraints) of the graphics are randomly distributed, and the characteristics of the distribution of layout graphics have not been considered.

Method used

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  • A Dummy Synthesis Method Based on Density Gradient Hotspot Clustering and Local Solving
  • A Dummy Synthesis Method Based on Density Gradient Hotspot Clustering and Local Solving
  • A Dummy Synthesis Method Based on Density Gradient Hotspot Clustering and Local Solving

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Experimental program
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Effect test

Embodiment 1

[0137] Embodiment 1 The comparison between the invention method of this method and the linear programming method on the filling effect

[0138] The overfill ratio is used to measure the accuracy of various dummy filling algorithms. The overfill rate is defined as:

[0139]

[0140] Among them, fill opt is the optimal filling amount obtained by linear programming method.

[0141] In this embodiment, the lower window density limit L=0.25. The weight function is defined as where c 0 =0.1,c 1 =-0.1,c 2 =1, the number of window divisions is r=3.

[0142] Figure 10It shows the overfill rate of the algorithm CPLF (CLP Plus Local Fill) proposed by the present invention when the gradient constraint changes from 0.06 to 0.1, and some experimental results are summarized in Table 1.

[0143] pass Figure 10 As can be seen in , the maximum overfill rate of CPLF is less than 6% in these examples. The overfill rate increases as the gradient constraint decreases, which is attr...

Embodiment 2

[0147] Embodiment 2 The execution efficiency of the method of the present invention follows the scalability of the problem scale

[0148] In order to demonstrate the scalability of the execution efficiency of the method of the present invention along with the scale of the problem, this embodiment uses calculation examples with different numbers of variables. The number of window divisions is set to 5. In order to have a similar distribution of gradient hotspots for all cases, the gradient constraints are varied in the range of 0.04 to 0.06.

[0149] The variation of the execution time of the inventive method CPLF algorithm with the number of variables is shown in Figure 11 middle. The execution time of the LP algorithm is also shown for comparison. From Figure 11 It can be seen that the temporal growth rate of CPLF is slower than that of LP method. In the largest calculation example (more than 8,000 variables), the solution time of the LP method exceeds 12 hours, while ...

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Abstract

The invention belongs to the field of manufacturability design of semiconductors and particularly relates to a dummy comprehensive optimization method considering density gradient constraints for the copper-connection dummy metal filling technology. According to the method, the upper limit and lower limit constraints and the density gradient constraints are applied at the same time in the dummy comprehensive process, and the dummy insertion number is minimized. According to the method, the inhibiting effect on technological deviation of chemical-mechanical polishing, photoetching and the like are fully considered. The method solves the dummy comprehensive problem considering the gradient constraints on the basis of the covering linear programming, hot spot cluster grouping and linear programming local solving method and lowers the time complexity of the problem to O(n2logn). Compared with an existing method, the dummy comprehensive optimization method well achieves trade-off between the calculating precision and the executing efficiency and is a feasible method for solving large-scale dummy comprehensive problems.

Description

technical field [0001] The invention belongs to the technology for copper interconnect dummy metal filling in the field of semiconductor manufacturability design, and specifically relates to a dummy comprehensive optimization method that considers density gradient constraints and uses gradient hotspot clustering grouping and local solution technology. Background technique [0002] The development of the integrated circuit industry is an important driving force to promote the progress of social informatization. As the integrated circuit manufacturing process enters the nanometer scale, more and more serious process deviations affect the performance and yield of chips. Manufacturing deviations produced by processes such as chemical mechanical polishing (CMP: Chemical Mechanical Planarization) and photolithography obviously show a dependence on layout patterns (Pattern Dependent). The CMP process will produce dishing (Disshing) and erosion (Erosion) defects [1, 2] on the surfa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50
Inventor 曾璇严昌浩陶俊周星宝武鹏
Owner FUDAN UNIV
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