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Ion implantation method and ion implantation apparatus

An ion implantation, ion beam technology, applied in the manufacture of discharge tubes, electrical components, semiconductor/solid state devices, etc., can solve the problem of increasing wafer time

Inactive Publication Date: 2014-01-29
SENCORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This leads to an increase in the time that ions are not implanted into the wafer, so there is room for further improvement in ion implantation efficiency

Method used

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  • Ion implantation method and ion implantation apparatus
  • Ion implantation method and ion implantation apparatus
  • Ion implantation method and ion implantation apparatus

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Embodiment Construction

[0035] Hereinafter, modes for implementing the present invention will be described in detail with reference to the drawings. In addition, in description of drawings, the same code|symbol is attached|subjected to the same element, and repeated description is abbreviate|omitted suitably. Also, the structures stated below are examples and do not limit the scope of the present invention in any way. In addition, in the following description, a semiconductor wafer will be used as an example of an object to be implanted with ions, but it may also be other substances or components.

[0036] First, a hybrid scanning single wafer ion implantation apparatus according to this embodiment will be described. In the semiconductor manufacturing process, for the purpose of changing the electrical conductivity and the crystal structure of the semiconductor wafer, etc., a process of injecting ions into the semiconductor wafer is routinely carried out. The equipment used in this process is gener...

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Abstract

The ion implantation method includes setting an ion beam scanning speed and a mechanical scanning speed of an object during ion implantation using hybrid scan in advance and implanting ions based on the set ion beam scanning speed and the set mechanical scanning speed of the object. In the setting in advance, each of the ion beam scanning speeds is set based on each of ion beam scanning amplitudes changing severally according to a surface outline of an object which is irradiated with the ions so that an ion beam scanning frequency is maintained constant for any of ion beam scanning amplitudes, and the mechanical scanning speed of the object corresponding to the ion beam scanning speed is set so that an ion implantation dose per unit area to be implanted into the surface of the object is maintained constant.

Description

technical field [0001] This application claims priority based on Japanese Patent Application No. 2012-156935 filed on July 12, 2012. The entire content of the application is incorporated in this specification by reference. [0002] The present invention relates to ion implantation, and more specifically, to an ion implantation method and an ion implantation device. Background technique [0003] In the semiconductor manufacturing process, a process of implanting ions into a semiconductor wafer is routinely carried out for the purpose of changing the conductivity and the crystal structure of the semiconductor wafer. The equipment used in this process is generally called an ion implantation equipment. [0004] The ion implantation apparatus is configured such that, for example, an ion source, an extraction electrode, a mass spectrometry magnet device, a mass spectrometry slit, an acceleration / deceleration device, a wafer processing chamber, etc. are arranged along the beam li...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/304H01J37/317
CPCH01L21/265H01J37/3023H01J37/3171H01J2237/30483H01J37/304H01J37/317
Inventor 二宫史郎越智昭浩
Owner SENCORP