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Ion implantation method and ion implantation device

An ion implantation, ion beam technology, applied in discharge tubes, electrical components, semiconductor/solid-state device manufacturing, etc., can solve problems such as increased wafer time

Inactive Publication Date: 2017-09-19
SENCORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This leads to an increase in the time that ions are not implanted into the wafer, so there is room for further improvement in ion implantation efficiency

Method used

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  • Ion implantation method and ion implantation device
  • Ion implantation method and ion implantation device
  • Ion implantation method and ion implantation device

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Embodiment Construction

[0035] Hereinafter, modes for implementing the present invention will be described in detail with reference to the drawings. In addition, in description of drawings, the same code|symbol is attached|subjected to the same element, and repeated description is abbreviate|omitted suitably. Also, the structures stated below are examples and do not limit the scope of the present invention in any way. In addition, in the following description, a semiconductor wafer will be used as an example of an object to be implanted with ions, but it may also be other substances or components.

[0036] First, a hybrid scanning single wafer ion implantation apparatus according to this embodiment will be described. In the semiconductor manufacturing process, for the purpose of changing the electrical conductivity and the crystal structure of the semiconductor wafer, etc., a process of injecting ions into the semiconductor wafer is routinely carried out. The equipment used in this process is gener...

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Abstract

The invention provides an ion implantation method and an ion implantation device capable of performing effective ion implantation. The ion implantation method of the present invention is an ion implantation method based on hybrid scanning. The ion implantation method includes: a step of presetting the scanning speed of the ion beam and the scanning speed of the object during ion implantation; and a step of implanting ions according to the set scanning speed of the ion beam and the scanning speed of the object. The presetting process sets the scanning speeds of the plurality of ion beams according to the respective scanning amplitudes of the ion beams that vary according to the surface shape of the object to be irradiated with ions, to ensure that the scanning frequency of the ion beams is constant, and to set the distance between the ion beams and the ion beams. The scanning speed corresponds to the scanning speed of the object, so as to ensure that the ion implantation amount per unit area implanted on the surface of the object is constant.

Description

technical field [0001] This application claims priority based on Japanese Patent Application No. 2012-156935 filed on July 12, 2012. The entire content of the application is incorporated in this specification by reference. [0002] The present invention relates to ion implantation, and more specifically, to an ion implantation method and an ion implantation device. Background technique [0003] In the semiconductor manufacturing process, a process of implanting ions into a semiconductor wafer is routinely carried out for the purpose of changing the conductivity and the crystal structure of the semiconductor wafer. The equipment used in this process is generally called an ion implantation equipment. [0004] The ion implantation apparatus is configured such that, for example, an ion source, an extraction electrode, a mass spectrometry magnet device, a mass spectrometry slit, an acceleration / deceleration device, a wafer processing chamber, etc. are arranged along the beam li...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/304H01J37/317
CPCH01J37/3023H01J37/304H01J37/3171H01J2237/30483H01J37/317H01L21/265
Inventor 二宫史郎越智昭浩
Owner SENCORP