Method of Inducing Quantum Well Mixing Using Laser Micro-region Plasma

Abstract

A method for inducing quantum well mixing through plasmas in a laser microcell includes the first step of forming a surface sacrificial layer on a quantum well layer on a quantum well structure piece through deposition, the second step of focusing a laser on the surface sacrificial layer through a laser head with a gas sending function so as to form the laser plasmas of reaction gas, the third step of controlling the laser plasmas to bombard the surface sacrificial layer, and modifying part of the surface sacrificial layer to form a modified area, the fourth step of conducting annealing, and transmitting the chemical denaturation or the structure defect of laser plasma modified area into the quantum well structure through the thermal induction effect so that trap components and base components of the quantum well layer can be mixed and the band gap wave length blue shift of the quantum well structure can be achieved. According to the method, selected area quantum well mixing can be well conducted.

Description

technical field [0001] The invention relates to semiconductor optical device and photonic integrated circuit technology, in particular to a method for using laser micro-region plasma to induce quantum well mixing. Background technique [0002] Photonic integration is to integrate dozens or even hundreds of optical components into a single integrated circuit or chip. Since it is very difficult to integrate various optical devices on one chip, the commercialization of photonic integrated circuits is very difficult. slow. The biggest difference from microelectronic integrated circuits based on silicon materials, monolithic photonic integrated circuits are currently mainly based on indium phosphide gallium arsenic material systems, and various materials with different photonic band gaps need to be formed on the same substrate to meet various requirements. The requirements of active and passive devices, such as detectors in optical integrated circuits need to absorb light, while...

AI Technical Summary

Problems solved by technology

Although this kind of quantum well mixing that relies on impurity induction can change the band gap of semiconductor materials, residual diffusion or implantation of impurities will increase the light absorption rate due to the free carrier absorption mechanism; overall, currently relying on ion implantation The method of realizing QWI is the most mature, but this method needs to be combined with photolithography, etching and other technologies to achieve regional change of bandgap width

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